A large radius probe for a surface analysis instrument such as an atomic force microscope (AFM). The probe is microfabricated to have a tip with a hemispherical distal end or apex. The radius of the apex is the range of about a micron making the probes particularly useful for nanoindentation analyses, but other applications are contemplated. In particular, tips with aspect ratios greater than 2:1 can be made for imaging, for example, semiconductor samples. The processes of the preferred embodiments allow such large radius probes to be batch fabricated to facilitate cost and robustness.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.

A metal oxide impregnated activated carbon and a method of making the metal oxide impregnated carbon wherein the application of metal oxide impregnants are chemisorbed to active sites in a pore structure using atomic layer deposition to enable targeted impregnant compositions and configurations on activated carbons used for air purification devices.

The disclosure relates to the inherently selective mixed oxide deposition of a dielectric film on non-metallic substrates without concomitant growth on metallic substrates using a sequence of exposure to metal alkyl, heteroatom silacyclic compound, and water. The resulting films show much higher growth rates than corresponding metal oxide and inherent selectivity towards non-metallic surfaces. Films as thick as 14 nm can be grown on dielectric substrates such as thermal oxide and silicon nitride without any growth observed on metallic films such as copper and without the use of an inhibitor. Such dielectric-on-dielectric (DoD) growth is a critical element of many proposed fabrication schemes for future semiconductor device fabrication such as fully self-aligned vias.

An ALD preparation method for eliminating camera module dot defects includes: placing a base substrate in a reaction chamber, and heating to 100-400° C.; introducing a first reaction precursor into the reaction chamber to chemically adsorb the first reaction precursor on the base substrate to form a first film layer; removing the excess first reaction precursor, and purging with inert gas; introducing a second reaction precursor into the reaction chamber to create a reaction between the second reaction precursor and the first reaction precursor to form a first refractive index layer; removing the excess second reaction precursor and a by-product of the reaction, and purging with inert gas; introducing a third reaction precursor into the reaction chamber to chemically adsorb the third reaction precursor on a surface of the first refractive index layer to form a second film layer; and removing the excess third reaction precursor, and purging with inert gas.

Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

There is provided a method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.