Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.

In an embodiment method for growing a rare earth oxide crystal, a surface of a Si substrate is cleaned by carrying out treatments using chemical solutions such as a mixed sulfuric acid-hydrogen peroxide solution, hot nitric acid, or diluted hydrofluoric acid several times to remove impurities on the surface of the Si substrate. A silicon oxide layer including amorphous SiO.sub.x is formed on the Si substrate. A metal layer including a rare earth metal is formed in contact with an upper surface of the silicon oxide layer. The silicon oxide layer is reacted with the metal layer through heating to form a first crystal layer including a rare earth oxide crystal obtained by oxidizing the rare earth metal on the Si substrate.

A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

A ceramic matrix composite article includes a melt infiltration ceramic matrix composite substrate comprising a ceramic fiber reinforcement material in a ceramic matrix material having a first free silicon proportion, and a melt infiltration ceramic matrix composite outer layer comprising a ceramic fiber reinforcement material in a ceramic matrix material having a second free silicon proportion disposed on an outer surface of at least a portion of the substrate, or a polymer impregnation and pyrolysis ceramic matrix composite outer layer comprising a ceramic fiber reinforcement material in a ceramic matrix material having a second free silicon proportion disposed on an outer surface of at least a portion of the substrate. The second free silicon proportion is less than the first free silicon proportion.

The present invention discloses a two-dimensional AlN material and its preparation method and application, wherein the preparation method comprises the following steps: (1) selecting a substrate and its crystal orientation; (2) cleaning the surface of the substrate; (3) transferring a graphene layer to the substrate layer; (4) annealing the substrate; (5) using the MOCVD process to introduce H.sub.2 to open the graphene layer and passivate the surface of the substrate; and (6) using the MOCVD process to grow a two-dimensional AlN layer. The preparation method of the present invention has the advantages that the process is simple, time saving and efficient. Besides, the two-dimensional AlN material prepared by the present invention can be widely used in HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs, and other fields.

A surface treatment method of metallic materials provided by the present invention includes steps of: (S1) cleaning a surface of an initial metallic material to be treated, and then drying; and (S2) placing the dried metallic material in a heating furnace, adjusting a vacuum degree inside the heating furnace to a preset value under the protection of a mixed flowing gas of oxygen and an inert gas, heating and preserving, cooling to room temperature by furnace cooling, and completing the surface treatment of the metallic material to be treated, wherein the heating temperature is larger than the destruction temperature of the native oxide at the surface of the initial metallic material. The present invention is able to increase the surface hardness of the metallic material within a large depth, and has the advantages of low processing cost, high efficiency, good controllability, convenient operation and low surface contamination for the workpiece.

A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

A device configured to convert or amplify a particle, the conversion or amplification being reliant on the impact of a particle on a surface of the device causing emission of one or more secondary electrons from the same surface. The device includes a carbon-based layer capable of secondary electron emission upon impact of a particle. The surface may be used to convert, for example, an ion into an electron signal, or an electron signal into an amplified electron signal, such as in conversion or amplification dynodes.

A substrate holder 10 in the form of a mesh structure with a sample-receiving surface 10A is provided. The substrate holder 10 containing the samples 21 is at least partially folded and inserted into a substrate processing apparatus to produce coated samples 21A by directing at least one coating material P1, P2, . . . , Pn onto the samples through the mesh structure. A substrate processing system and a method for producing coated substrates are further provided.

There is included (a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and (c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.