This invention discloses a method for preparing an antibacterial and dust-removal membrane. The method comprises the following steps: depositing a layer of nano-ZnO on the immersed membrane surface as the seed crystal with the atomic layer deposition instrument (ALD instrument); vertically immersing the membrane covered with nano-ZnO layer in a hydrothermal reactor filled with crystal growth solution, heating it for a period of time, taking the membrane out and cooling it to the room temperate, and removing it from the substrate; finally, heating this membrane in a drier, and purging it with nitrogen to remove the paraffin within the membrane pore to obtain the porous membrane with nano-ZnO arrays growing on the surface.

A method for effectively removing minute impurities of 1 μm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.

A method of modifying a surface of a medical device for implantation or disposition inside a patient is described. The medical device comprises a structure having at least one surface. The method includes the steps of: placing the medical device into a plasma chamber substantially free from contaminants and substantially sealing the plasma chamber from the atmosphere; removing at least an outermost layer of any oxide layer from the at least one surface of the structure by a plasma oxide-removal process, whilst maintaining the plasma chamber under seal from the atmosphere; and subsequently forming a new oxide layer at the least one surface of the structure by introducing at least one gas into the plasma chamber, whilst maintaining the plasma chamber under seal from the atmosphere. A medical device including a bulk material and an oxide layer disposed over at least one surface of the medical device. The oxide layer is substantially pure and free from contaminants.

An area-selective deposition method may include providing a substrate structure including a silicon oxide area and a silicon nitride area; performing a surface treatment on the silicon oxide area and the silicon nitride area of the substrate structure to form a first functional group on a surface of the silicon oxide area and to form a second functional group on a surface of the silicon nitride area; and performing an atomic layer deposition (ALD) process in a chamber in which the substrate structure is disposed, to selectively form a silicon oxide layer on the silicon oxide area among the silicon nitride area and the silicon oxide area. The ALD process may include: supplying an aminosilane-based silicon precursor into the chamber; purging the chamber with a first purge gas; supplying an oxygen-containing source into the chamber; and purging the chamber with a second purge gas.

In some embodiments, apparatuses and methods are provided herein useful for sensing pressure. In some embodiments, miniature housings are manufactured at ends of optical fibers. In some embodiments, a diamond diaphragm is provided on a hollow housing that receives a fiber optic cable and is sealed to form a Fabry-Perot cavity. In some forms, a plurality of sensors may be manufactured in batch.

A method of repairing an article including cleaning a repair area, wherein the repair area comprises a ceramic matrix composite; and depositing a ceramic material in the cleaned repair area using laser assisted chemical vapor deposition. Also disclosed is a repaired ceramic composite produced by this method.

A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

A method for fabricating a composite film structure, the method includes determining a desired morphology for a metallic layer of the composite film structure, selecting a first metal substrate based on the determining, transferring a graphene layer onto the first metal substrate, depositing the metallic layer on the graphene layer to achieve the desired morphology, and removing the first metal substrate from the graphene and the deposited metallic layer to form the composite film structure. A surface energy difference between the first metal substrate and the deposited metallic layer results in the desired morphology of the metallic layer.