Disclosed herein is a method of treating a composite piston pin, including: preparing the piston pin of which at least surface layer includes a composite material including a reinforcing fiber and a resin; improving roughness by processing the surface layer of the piston pin; and forming a coating layer on the surface layer processed to reduce a friction coefficient of the piston pin.

A process for repairing a damaged annular region of an anode configured to emit x-rays includes the step of machining the damaged annular region made of an initial target coating to a depth smaller than a thickness of the coating so as to leave behind a residual annular layer. An intermediate layer is then deposited on the residual annular layer. A repairing layer is then deposited on the intermediate layer. A heat treatment is then performed using an anneal which causes, by interdiffusion and formation of a solid solution, the material of the intermediate layer and the material of the residual annular layer to diffuse into each other and further cause the material of the intermediate layer and the material of the repairing layer diffuse into each other. As a result of this anneal the intermediate layer disappears.

A method for preparing a diamond is disclosed. The method includes: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films, using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, the plasma chemical vapor deposition method using multi-energy source coupled plasma and, post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.

Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500? C. or less.

Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of warpage of the polycrystalline SiC substrate is 142 m or more.

In order to reduce edge defects efficiently and sufficiently, a method for manufacturing a SiC epitaxial wafer according to the present invention is a method for manufacturing a SiC epitaxial wafer that forms a SiC epitaxial layer on top of a SiC single crystal substrate having an off angle, and includes a rough polishing step for subjecting an outer circumferential edge on a starting side of step-flow growth in the SiC single crystal substrate to rough polishing before forming the SiC epitaxial layer; and a final polishing step for further polishing for finish.

A pulley for an elevator includes a base body made e.g. from steel and having a rotation-symmetrical circumferential surface. Additionally, a friction reducing coating is applied to the circumferential surface of the base body. Due to the friction reducing coating and, optionally, due to additionally smoothing the base body's circumferential surface before depositing the coating, a very low friction between an outside surface of the pulley and a contacting surface of a suspension traction member may be obtained. Thereby, guiding characteristics of the pulley may be improved and/or alignment requirements upon installation of the pulley may be relaxed. Preferably, the coating may comprise diamond-like carbon (DLC) or chromium nitride (CrN) such that the coating provides for superior wear resistance, slickness, corrosion protection and electrical characteristics.

An aerospace mirror having a reaction bonded (RB) silicon carbide (SiC) mirror substrate, and a SiC cladding on the RB SiC mirror substrate forming an optical surface on a front side of the aerospace mirror. A method for manufacturing an aerospace mirror comprising obtaining a green mirror preform comprising porous carbon, silicon carbide (SiC), or both, the green mirror preform defining a front side of the aerospace mirror and a back side of the aerospace mirror opposite the front side; removing material from the green mirror preform to form support ribs on the back side; infiltrating the green mirror preform with silicon to create a reaction bonded (RB) SiC mirror substrate from the green mirror preform; forming a mounting interface surface on the back side of the aerospace mirror from the RB SiC mirror substrate, and forming a reflector surface of the RB SiC mirror substrate on the front side of the aerospace mirror. Additionally, the method can comprise cladding the reflector surface of the RB SiC mirror substrate with SiC to form an optical surface of the aerospace mirror.

A metal/polymer composite material is disclosed, wherein the metal/polymer composite material comprises a polymer base and a metal heat-dissipation layer. The heat-dissipation layer comprises a roughed surface with an isotropic surface roughness. The metal heat-dissipation conformally blankets over the roughed surface.