C23C16/0254

MOLYBDENUM (0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS

Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

METHOD AND APPARATUS OF LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF GRAPHENE

Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma chamber, and flowing a carbon source and a hydrogen source into the modular microwave plasma chamber. In an embodiment, the method further comprises striking a plasma in the modular microwave plasma chamber, where a substrate temperature is below approximately 400° C., and depositing the graphene layer on the substrate.

METHODS AND SYSTEMS FOR PREPARING COMPOSITE CRYSTALS

The present disclosure provides a method for preparing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.

FILM PRODUCTION METHOD, FILM PRODUCTION DEVICE, AND ELECTRODE FOIL PRODUCTION METHOD

A film production method for producing a layer containing a metal oxide, the film production method including: a heating step of heating a metal foil containing a first metal by bringing a part of the metal foil into contact with at least one heat generator; a first contact step of letting first gas containing a second metal to be in contact with both surfaces of the metal foil in a state where the part of the metal foil is supported; and a second contact step of letting second gas containing an oxidant to be in contact with the both surfaces of the metal foil in a state where the part of the metal foil is supported.

Nanostructured coated substrates for use in cutting tool applications

A coating for carbide substrates employs a nanostructured coating in conjunction with a non-nanostructured coating. The nanostructured coating is produced by the addition of a refining agent flow, particular hydrogen chloride gas, during deposition, and may be produced as multiple individual nanostructured layers varying functional materials in a series. The combination of a nanostructured coating and non-nanostructured coating is believed to produce a cutting tool insert that exhibits longer life. Pre-treating the substrate with a mixture of compressed air and abrasive medium prior to coating the substrate and post-treating the coated substrate with a mixture of water and abrasive medium after the coating process is believed to further enhance the wear resistance and usage life of the cutting tool.

Processes for depositing silicon-containing films using halidosilane compounds

Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.

Optical device fabrication

Transparent conductive coatings are polished using particle slurries in combination with mechanical shearing force, such as a polishing pad. Substrates having transparent conductive coatings that are too rough and/or have too much haze, such that the substrate would not produce a suitable optical device, are polished using methods described herein. The substrate may be tempered prior to, or after, polishing. The polished substrates have low haze and sufficient smoothness to make high-quality optical devices.

PLASMA ELECTROLYTIC POLISHED DIESEL ENGINE COMPONENTS
20210269935 · 2021-09-02 · ·

A method and system is provided for reducing surface roughness of a diesel engine component. The method and system may apply a voltage to a plasma electrolyte polishing cell. The plasma electrolyte polishing cell may include a diesel engine component and an aqueous electrolyte solution. The method and system may cause a plasma layer to form around a surface of the diesel engine component as a result of applying the voltage to the plasma electrolyte polishing cell. The method and system may terminate the voltage to the plasma electrolyte polishing cell. The method and system may apply a coating process to the diesel engine component.

SILICON NITRIDE CERAMIC TOOL COMPRISING DIAMOND FILM AND METHOD OF PREPARING THE SAME
20210237168 · 2021-08-05 ·

A cutting tool, including a silicon nitride (Si.sub.3N.sub.4) ceramic substrate, and a diamond film coated on the surface of the Si.sub.3N.sub.4 ceramic substrate. The diamond film has a thickness of 7-12 μm. The cutting tool includes a tool nose, a blade, and a handle. The blade has a rake angle γ of 5-15°, a clearance angle α of 10-14°, and a helix angle of 15-45°. The blade includes four cutting edges.

PREVENTING DEPOSITION ON PEDESTAL IN SEMICONDUCTOR SUBSTRATE PROCESSING

A heat shield structure for a substrate support in a substrate processing system includes an outer shield configured to surround a stem of the substrate support. The outer shield is further configured to define an inner volume between the outer shield and an upper portion of the stem and a lower surface of the substrate support and a vertical channel between the outer shield and a lower portion of the stem of the substrate support. The outer shield includes a cylindrical portion, a first lateral portion extending radially outward from the cylindrical portion, an angled portion extending radially outward and upward from the first lateral portion, and a second lateral portion extending radially outward from the angled portion.