An apparatus for applying a protective coating to a high volume of separate electronic device assemblies includes a treatment element that is configured to prepare the high volume of electronic devices before protective coatings are applied to the electronic devices. The apparatus also includes a coating element configured to apply protective coatings to the high volume of separate electronic device assemblies.

A monofacial tube-type PERC solar cell includes a rear silver busbar (1), an all-aluminum rear electric field (2), a rear composite film (3), P-type silicon (5), an N-type emitter (6), a front passivation film (7), and a front silver electrode (8). The rear composite film (3) includes one or more of an aluminum oxide film, a silicon dioxide film, a silicon oxynitride film, and a silicon nitride film, and is deposited on a rear surface of a silicon wafer by a tubular PECVD device. The tubular PECVD device includes four gas lines of silane, ammonia, trimethyl aluminum, and nitrous oxide. Such monofacial tube-type PERC solar cell has advantages of high photoelectric conversion efficiency, high appearance quality and high electroluminescence yield, and solves the problems of scratching and undesirable coating due to the process.

A surface-coated cutting tool has a rake face and a flank face, and includes a base material and a coating formed on the base material. The base material has a cutting edge face connecting the rake face to the flank face. The coating includes an aluminum oxide layer containing a plurality of aluminum oxide crystal grains. The aluminum oxide layer includes: a first region made up of a region A on the rake face and a region B on the flank face; a second region on the rake face except for the region A; and a third region on the flank face except for the region B. The aluminum oxide layer satisfies a relation: ba>0.5, where a is an average value of TC(006) in the first region in texture coefficient TC(hkl), and b is an average value of TC(006) in the second or third region in texture coefficient TC(hkl).

A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

A method of forming a passivation layer on a substrate includes providing a substrate in a processing chamber. The substrate includes a metallic surface which is a copper, tin or silver surface, or an alloyed surface of one or more of copper, tin or silver. The method further includes depositing at least one organic layer onto the metallic surface by vapour deposition, the organic layer formed from an organic precursor. The organic precursor includes a first functional group including at least one of oxygen, nitrogen, phosphorus, sulphur, selenium, tellurium, or silicon, and a second functional group selected from hydroxyl (OH) or carboxyl (COOH). The first functional group is adsorbed onto the metallic surface. The method further includes depositing at least one inorganic layer onto the organic layer by vapour deposition, wherein the second functional group acts as an attachment site for the inorganic layer.

Transparent conductive coatings are polished using particle slurries in combination with mechanical shearing force, such as a polishing pad. Substrates having transparent conductive coatings that are too rough and/or have too much haze, such that the substrate would not produce a suitable optical device, are polished using methods described herein. The substrate may be tempered prior to, or after, polishing. The polished substrates have low haze and sufficient smoothness to make high-quality optical devices.

There is provided a nitride semiconductor template, including: a substrate having a front surface and a back surface opposite to the front surface; a back side semiconductor layer provided on a back surface side of the substrate, comprising a polycrystalline group III nitride semiconductor, and having a linear expansion coefficient different from a linear expansion coefficient of the substrate; and a front side semiconductor layer provided on a front surface side of the substrate, comprising a monocrystalline group III nitride semiconductor, and having a linear expansion coefficient different from a linear expansion coefficient of the substrate, wherein a thickness of the front side semiconductor layer is a thickness exceeding a critical thickness at which cracks are generated in the front side semiconductor layer when only the front side semiconductor layer is formed without forming the back side semiconductor layer.

A method and apparatus for reproducing a component of a semiconductor manufacturing apparatus, and a reproduced component are provided. The method may include a preparing step of preparing a damaged component of a semiconductor manufacturing apparatus, a first cleaning step of cleaning the damaged component, a masking step of masking at least one of areas including an undamaged part of the damaged component, a reproduced part forming step of forming a reproduced part on the damaged component using a chemical vapor deposition (CVD), a post-grinding step of grinding the damaged component with the reproduced part, and a second cleaning step of cleaning the damaged component with the reproduced part.

A multilayer substrate can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

A coated cutting tool comprising a substrate and a coating layer formed on a surface of the substrate, wherein: the coating layer comprises a lower layer, an intermediate layer and an upper layer, the lower layer, the intermediate layer and the upper layer being laminated in order from the substrate side toward a surface side of the coating layer; the lower layer comprises a Ti compound layer; the intermediate layer contains -Al.sub.2O.sub.3; the upper layer contains TiCN; an average thickness of each of the lower layer, the intermediate layer, and the upper layer is within a specific range; a ratio of a length of 3 grain boundaries to a total 100% length of all grain boundaries in a specific region of the upper layer is from 20% or more to 60% or less; and a ratio of (111)-oriented grains in the upper layer is 30 area % or more.