A film deposition method includes depositing an amorphous silicon film in a substrate under a process condition. The process condition includes supplying SiH.sub.4 gas into a processing chamber in which the substrate is placed. The process condition includes setting a temperature in the processing chamber to be in a range of greater than or equal to 300° C. and less than or equal to 440° C. The process condition includes setting a pressure of the processing chamber to be in a range of greater than or equal to 10 Torr and less than or equal to 100 Torr.

Provided is a photocathode structure including: a photocathode including silicon (Si); an intermediate layer formed on the photocathode, and including a silicon oxide (SiO.sub.x); and a protective layer foiled on the intermediate layer, and including a metal oxide, wherein the intermediate layer is a tunneling barrier configured to transfer charges from the photocathode to the protective layer by an electric field applied from an outside.

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

A component configured to be in contact with a hydrocarbon fluid and a method of preparing a contact surface of the component. The component may include a wall having the contact surface configured to be in contact with the hydrocarbon fluid. The contact surface is formed from a metal comprising a metal M, where M is selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt). A metal-ligand complex comprising phosphorus (P) is on the contact surface. The method of preparing a contact surface of the component may include treating the contact surface with a metal-ligand complex precursor comprising a phosphorus (P) ligand.

There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.

A high-specific surface area and super-hydrophilic gradient boron-doped diamond electrode is disclosed. The electrode directly uses a substrate as an electrode matrix; or a transition layer is disposed on a surface of the substrate and used as the electrode matrix. A gradient boron-doped diamond layer is disposed on a surface of the electrode matrix, and a contact angle of the electrode is θ<40°. The gradient boron-doped diamond layer includes: a gradient boron-doped diamond bottom layer, a gradient boron-doped diamond middle layer, and a gradient boron-doped diamond top layer, a boron content of which gradually increases, so the gradient boron-doped diamond layer has high adhesion, high corrosion resistance, and high catalytic activity. The high-content boron of the top layer is combined with a one-time high-temperature treatment, so the gradient boron-doped diamond electrode has a high-specific surface area and superhydrophilicity, which may greatly improve the mineralization and degradation efficiency of the electrode.

Various embodiments relate to methods, apparatus, and systems for forming an interconnect structure, or a portion thereof. The method may include contacting the substrate with a functionalization bath comprising a first solvent and a functionalization reactant to form a modified first material, and then depositing a second material on the modified first material through electroless plating, electroplating, chemical vapor deposition, or atomic layer deposition. The first material may be a dielectric material, a barrier layer, or a liner, and the second material may be a barrier layer or a barrier layer precursor, a liner, a seed layer, or a conductive metal that forms the interconnect of the interconnect structure, according to various embodiments.

An article includes a substrate, an intermediate coating on the substrate, and an environmental barrier coating (EBC) on the intermediate coating. The substrate includes a ceramic, ceramic matrix composite (CMC), or superalloy. The EBC includes a rare earth disilicate. When the intermediate coating is at an initial state, such as prior to exposure to an oxidating environment, the intermediate coating includes a bond coat on the substrate and a reactive layer on the bond coat. The bond coat includes silicon, while the reactive layer includes a rare earth monosilicate or rare earth oxide. In response to oxidation of a portion of the silicon of the bond coat to form silicon dioxide, a portion of the rare earth monosilicate or rare earth oxide of the reactive layer is configured to react with at least a portion of the silicon dioxide to form a converted layer that includes a rare earth disilicate.

Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. A substrate with a metal surface, a dielectric surface and an aluminum oxide surface has a blocking layer deposited on the metal surface using an alkylsilane.

A jet-black coating that resists wear; first, at least one DLC layer with a high degree of hardness is applied to a component and then a gradient layer, whose density decreases in the direction toward the surface, is applied to this DLC layer. By means of the refraction index progression that this produces in the gradient layer, the gradient layer functions as a reflection-reducing layer.