A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.

Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L.sub.1(L.sub.2).sub.y, wherein M is a metal, L.sub.1 is an aromatic ligand, L.sub.2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L.sub.2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WClx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.

Methods for forming a nucleation layer on a substrate. In some embodiments, the processing method comprises sequential exposure to a first reactive gas comprising a metal precursor and a second reactive gas comprising a halogenated silane to form a nucleation layer on the surface of the substrate.

A cutting tool comprising a base material and a coating arranged on the base material; wherein: the coating comprises an α-Al.sub.2O.sub.3 layer composed of a plurality of α-Al.sub.2O.sub.3 particles; the average particle diameter a of the α-Al.sub.2O.sub.3 particles in a first region of the α-Al.sub.2O.sub.3 layer is 0.10 μm or more and 0.30 μm or less; the average particle diameter b of the α-Al.sub.2O.sub.3 particles in a second region of the α-Al.sub.2O.sub.3 layer is 0.30 μm or more and 0.50 μm or less; the average particle diameter c of the α-Al.sub.2O.sub.3 particles in a third region of the α-Al.sub.2O.sub.3 layer is 0.30 μm or more and 0.50 μm or less; and the ratio b/a is 1.5 or more and 5.0 or less.

A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.

There is provided a technique that includes: supplying a film formation inhibition gas to the substrate, which includes a first base and a second base on a surface of the substrate, to form a film formation inhibition layer on a surface of the first base; supplying a film-forming gas to the substrate after forming the film formation inhibition layer on the surface of the first base, to form a film on a surface of the second base; and supplying a halogen-free substance, which chemically reacts with the film formation inhibition layer and the film, to the substrate after forming the film on the surface of the second base, in a non-plasma atmosphere.

A method is for depositing a thin tungsten and/or molybdenum sulfide film on a substrate chemically, under vacuum.

A method for treating surface of substrate, the method including forming a film including a high molecular weight condensate of a silylation agent on the surface thereof to allow a substrate having a plurality of regions to be modified at modification degrees that are different depending on materials of the regions on a surface of the substrate. The method includes preparing a substrate having a surface including two or more regions having different materials; exposing the surface to a surface treatment agent; and baking the substrate, the method not including rinsing the surface with a liquid between the exposing and the baking, the surface treatment agent including a silylation agent and not a nitrogen-containing heterocyclic compound, the silylation agent including organomonosilane that has 2 to 4 nitrogen atoms bonded to a silicon atom.