C23C16/0272

VAPOR DEPOSITION OF MOLYBDENUM USING A BIS(ALKYL-ARENE) MOLYBDENUM PRECURSOR

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene).sub.2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz).sub.2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

OPTICAL LAMINATE, ARTICLE AND METHOD OF MANUFACTURING OPTICAL LAMINATE

This optical laminate includes a transparent substrate, an optical functional layer, and an antifouling layer laminated in this order, wherein the optical functional layer is a laminate in which a low refractive index layer and a high refractive index layer are alternately laminated, the antifouling layer is formed of a vapor-deposited film obtained by vapor deposition of an antifouling material, and the residual amount of fluorine atoms in the antifouling layer detected by XRF after 10 minutes of cleaning by irradiation with 40 KHz and 240 W ultrasonic waves in a fluorine-based solvent is 70% or more.

GAS SUPPLY AMOUNT CALCULATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
20230129351 · 2023-04-27 ·

Gas supply amount calculation method includes: calculating flow rate of first substance gas by subtracting flow rate of second substance gas from flow rate of mixed gas of the first and second substance gas flowing through gas supply path connected to processing container configured to perform film formation by atomic layer deposition method; calculating first integrated flow rate of the first substance gas over time in remaining plurality of cycles after elapse of a predetermined number of cycles immediately after start of the film formation over a plurality of cycles; calculating average integrated flow rate per cycle by dividing the first integrated flow rate by the number of the remaining plurality of cycles; and calculating total supply amount of the first substance gas in the plurality of cycles by adding multiplication value obtained by multiplying the average integrated flow rate by the predetermined number and the first integrated flow rate.

PROCESS FOR PRODUCTION OF NANO-COATED SUBSTRATE
20230132010 · 2023-04-27 · ·

The present invention is directed to a process for manufacturing a nano-coated pulp-based substrate comprising the steps of: a) providing a suspension comprising pulp, said pulp having Schopper Riegler value of at least 70°; b) using the suspension of step a) to form a wet web; c) dewatering and/or drying the wet web to form a substrate; d) adding a first layer of an acrylic monomer solution comprising less than 2 wt-% water to the surface of the substrate, followed by radiation curing the first layer; e) optionally adding a second layer comprising an acrylic monomer solution to the surface of the cured first layer and radiation curing the second layer; f) providing a nano-coating on the surface of the cured first or second layer such that a nano-coating having a thickness in the range of from 0.1 nm to 100 nm is provided on the substrate.

METHOD AND APPARATUS FOR FILLING GAP USING ATOMIC LAYER DEPOSITION

A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer on a side wall of the gap; forming a first precursor layer by adsorbing a first reactant into a bottom of the gap and the side wall of the gap around the bottom of the gap; and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap by adsorbing a second reactant into the first precursor layer. The forming of the first reaction inhibition layer may include adsorbing a first reaction inhibitor into the side wall of the gap; and forming a second reaction inhibitor by removing a specific ligand from the first reaction inhibitor.

Method for openly and continuously growing carbon nanomaterials
11473192 · 2022-10-18 · ·

The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.

Process of manufacture a nuclear component with metal substrate by DLI-MOCVD and method against oxidation/hydriding of nuclear component

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Liner for V-NAND word line stack

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

Film forming method

A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.

CUTTING TOOL

Provided is a cutting tool comprising a base body and a hard carbon film arranged on the base body, in which the hard carbon film includes an amorphous phase and a graphite phase, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the degree of orientation of the graphite phase is no more than 6.