Patent classifications
C23C16/042
TOPOSELECTIVE VAPOR DEPOSITION USING AN INHIBITOR
The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.
FABRICATION METHOD OF CONDUCTIVE NANONETWORKS THROUGH ADAPTATION OF SACRIFICIAL LAYER
There is provided a fabrication method of conductive nanonetworks through adaptation of a sacrificial layer includes: forming nanowire networks on a substrate; forming the sacrificial layer on a front surface of the substrate including the nanowire networks; removing the nanowire networks to expose a surface of the substrate within a region from which the nanowire networks are removed; forming a conductive material on the front surface of the substrate to fill the region, from which the nanowire networks are removed, with the conductive material while forming the conductive material on the sacrificial layer; and forming conductive nanonetworks made of the conductive material which fills the region from which the nanowire networks are removed, by removing the sacrificial layer.
Deposition mask and method of manufacturing the deposition mask
A method of manufacturing a deposition mask includes preparing a mask-target substrate which has one surface on which a sacrificed layer pattern is formed and comprises a cover area covered by the sacrificed layer pattern and a plurality of exposed areas exposed by the sacrificed layer pattern; forming holes in the exposed areas of the mask-target substrate by emitting laser toward the mask-target substrate; and removing the sacrificed layer pattern, wherein the sacrificed layer pattern has a higher reflectance with respect to the laser than a reflectance of the mask-target substrate.
MASK, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING DISPLAY PANEL
A manufacturing method of a mask includes forming a first mask layer, forming a second mask layer on the first mask layer, forming a photoresist pattern layer on the second mask layer, removing a first area of the second mask layer, which is exposed through the photoresist pattern layer, defining an opening through the first mask layer, removing a portion of the photoresist pattern layer to expose a portion of a second area of the second mask layer, and removing the portion of the second area of the second mask layer.
MASK, METHOD OF PROVIDING MASK, AND METHOD OF PROVIDING DISPLAY PANEL USING THE SAME
A method of providing a mask includes providing a first mask layer facing a second mask layer, in the second mask layer, providing a first opening which corresponds to a deposition opening of the mask, providing an auxiliary layer which faces the first mask layer with the second mask layer therebetween and covers the first opening, in the auxiliary layer, providing a second opening which corresponds to the first opening and exposes the first mask layer to outside the auxiliary layer, in the first mask layer, providing a third opening which corresponds to the first opening and the second opening by using the auxiliary layer as a mask and providing the auxiliary layer separated from the first mask layer and the second mask layer to provide the deposition mask having the first mask layer having the third opening and the second mask layer having the first opening.
Passivation against vapor deposition
Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.
Integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for area selective-atomic layer deposition
An integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for conducting nanofabrication includes an electrohydrodynamic jet printing station that includes an E-jet printing nozzle, a spatial atomic layer deposition station that includes a zoned ALD precursor gas distributor that discharges linear zone-separated first and second ALD precursor gases, a heatable substrate plate supported on a motion actuator controllable to move the substrate plate in three dimensions, and a conveyor on which the motion actuator is supported. The conveyor is operative to move the motion actuator between the electrohydrodynamic jet printing station and the spatial atomic layer deposition station so that the substrate plate is conveyable between a printing window of the E-jet printing nozzle and a deposition window of the zoned ALD precursor gas distributor, respectively. A method of conducting area-selective atomic layer deposition is also disclosed.
Method of filling gaps with carbon and nitrogen doped film
A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.
Metal mask, method of manufacturing the same, and method of manufacturing display panel using the metal mask
A deposition mask includes a metal mask body in which a deposition opening is defined; and a coating layer including aluminum oxynitride, on an outer surface of the metal mask body.
MANUFACTURING METHOD OF OPTICAL ELEMENT, OPTICAL ELEMENT AND APPARATUS FOR MANUFACTURING OPTICAL ELEMENT
A manufacturing method of an optical element (10) of an augmented reality eyewear. At least one layer (300) of a material (200) is deposited on a waveguide (106) through perforations (204) of a plate (202) at a non-zero distance (D) from the waveguide (106). Height of the at least one layer (300) is made to vary in response to cross sectional areas of the perforations (204), which vary based on a location of the perforations (204) in the plate (202) for forming at least one diffractive grating (100, 102, 104) on the waveguide (106) from the at least one layer (300), the at least one diffractive grating (100, 102, 104) performing in-coupling and/or out-coupling of visible light between the waveguide (106) and environment.