Apparatuses and methods for depositing materials on both sides of a web while it passes a substantially vertical direction are provided. In particular embodiments, a web does not contact any hardware components during the deposition. A web may be supported before and after the deposition chamber but not inside the deposition chamber. At such support points, the web may be exposed to different conditions (e.g., temperature) than during the deposition. Also provided are substrates having materials deposited on both sides that may be fabricated by the methods and apparatuses.

A deposition mask assembly for manufacturing a plurality of display devices includes a frame having an opening area, a first open mask disposed on the frame and having a first body portion defining a plurality of patterns overlapping the opening area, and a second open mask disposed on the first open mask and having a second body portion defining a plurality of opening portions overlapping the patterns of the first open mask, in which each of the patterns includes an auxiliary pattern spaced apart from the first body portion and a first bridge pattern connecting the first body portion and the auxiliary pattern.

A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

Provided is a mask assembly. The mask assembly includes a mask frame and a mask. The mask is coupled to the mask frame to distinguish first to third deposition areas from each other. Each of the first and third deposition areas has a first width greater than a reference width in a first direction and a second width less than the first width in a second direction. The second deposition area has a third width less than the first width in the first direction and a fourth width less than the reference width in the second direction.

An alignment module for positioning a mask on a substrate comprises a mask stocker, an alignment stage, and a transfer robot. The mask stocker houses a mask cassette that stores a plurality of masks. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer one of the one or more masks from the mask stocker to the alignment stage and position the mask over the substrate. The alignment module may be part of an integrated platform having one or more transfer chambers, a factory interface having a substrate carrier chamber and one or more processing chambers. A carrier may be coupled to a substrate within the substrate carrier chamber and moved between the processing chambers to generate a semiconductor device.

A method of forming a vapour deposited polymeric conformal coating on a surface of a part (23). The method comprises placing the part (23) and a flow control screen in a deposition chamber (22); dispersing a gas into the chamber (22) from which the polymeric coating is deposited on the surface. The flow control screen is spaced apart from the surface and is configured to control a localised flow of the gas in the chamber so as to impose a structure on the deposited coating.

Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO.sub.2), copper (Cu), and low-k dielectric materials.

A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber.

Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern. Therefore, a residue is not remained when the mask pattern is removed to prevent a defect caused by the residue from being generated.

Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

A mask is provided. The mask includes at least one first mask strip. The first mask strip includes a main body and at least one reinforced rib; the main body includes a plate surface defined by a first direction and a second direction, the first direction intersects with the second direction, and the main body extends along the first direction; and the at least one reinforced rib is on the plate surface of the main body and extends along the first direction, and a width of the at least one reinforced rib in the second direction is smaller than a width of the main body in the second direction.