The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.

A method of manufacturing a display apparatus includes placing a display substrate on a susceptor in a chamber, maintaining the susceptor at a first temperature, dividing the display substrate into a plurality of partial substrates, and maintaining the susceptor at a second temperature.

Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

A gasification component for use in a gasification environment includes a metal-based substrate and a coating deposited on the metal-based substrate. The coating includes at least about 51% by weight of chromium in the alpha phase at an operating temperature of gasification.

A mask frame assembly including a frame, a mask coupled to the frame and including a pattern region for deposition, and a partitioning stick coupled to the frame and configured to partition the pattern region of the mask into unit cell patterns. The partitioning stick includes a pair of opposing fixing ends fixed to sides of the frame, and a narrow width portion connecting the pair of fixing ends and including a first partitioning portion and a second partitioning portion respectively recessed inwards from both edges of the fixing ends in a width direction.

In a method for setting a mounting position of a target substrate, the test substrate is transferred to a second position deviated from a first position. A mask has expected arrangement position where a non-film formation region has a preset width when the target substrate is mounted at the first position and subjected to a film formation. The film is formed on the test substrate at the second position by using the mask. Width of the non-film formation region formed on the test substrate after the film formation is measured. Actual arrangement position of the mask is specified based on a direction and a distance of the deviation of the second position from the first position and the measured width of the non-film formation region. The first position is corrected such that the non-film formation region has the preset width based on the actual arrangement position of the mask.

A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.

A mask frame assembly through which a deposition material to be deposited on a substrate passes, the mask frame assembly includes a frame including an opening, and a mask having first and second ends in a length direction thereof coupled to the frame, in which the mask includes a main body part having a first thickness and including a pattern part, the pattern part including pattern holes through which the deposition material passes and a support part having a second thickness greater than the first thickness and extending away from first and second ends of the main body part.

Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

A transfer chamber for a processing system suitable for processing a plurality of substrates and a method of using the same is provided. The transfer chamber includes a lid, a bottom disposed opposite the lid, a plurality of sidewalls sealingly coupling the lid to the bottom and defining an internal volume, wherein the plurality of sidewalls form the faces of a dodecagon. An opening is formed in each of the faces, wherein the opening is configured for a substrate to pass therethrough. A transfer robot is disposed in the internal volume, wherein the transfer robot has effectors configured to support the substrate through one opening to another opening.