Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

A mask assembly includes an open mask provided with an opening and disposed on a frame, a unit mask disposed on the open mask, the unit mask including a deposition portion and welding portion, deposition openings are defined on the deposition portion to overlap the opening in a plan view, and the welding portions each protrude from the deposition portion in a protrusion direction away from the deposition portion, welding protrusions respectively disposed on the welding portions, and at least one residual structure including a residual welding portion separated from the unit mask and a residual welding protrusion disposed on the residual welding portion. The at least one residual structure is disposed between the welding portions.

A mask arrangement for masking a substrate in a processing chamber is provided. The mask arrangement includes a mask frame having one or more frame elements and is configured to support a mask device, wherein the mask device is connectable to the mask frame; and at least one actuator connectable to at least one frame element of the one or more frame elements, wherein the at least one actuator is configured to apply a force to the at least one frame element.

A method and apparatus for reproducing a component of a semiconductor manufacturing apparatus, and a reproduced component are provided. The method may include a preparing step of preparing a damaged component of a semiconductor manufacturing apparatus, a first cleaning step of cleaning the damaged component, a masking step of masking at least one of areas including an undamaged part of the damaged component, a reproduced part forming step of forming a reproduced part on the damaged component using a chemical vapor deposition (CVD), a post-grinding step of grinding the damaged component with the reproduced part, and a second cleaning step of cleaning the damaged component with the reproduced part.

Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

There is provided a technique that includes: (A) supplying a modifying agent to a substrate including a first surface and a second surface to form an inhibitor layer on the first surface; and (B) supplying a film-forming agent to the substrate after forming the inhibitor layer on the first surface to form a film on the second surface, wherein a width of an inhibitor molecule constituting the inhibitor layer is defined as WI, a spacing of adsorption sites on the first surface is defined as DA, a width of a molecule X constituting a predetermined substance contained in the film-forming agent is defined as WP, wherein WP>DA−WI is satisfied when WI is smaller than DA, and wherein WP>DAx−WI is satisfied when WI is larger than DA, where x is a smallest integer that satisfies WI<DAx.

A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

A method may include providing a cavity in a surface of a substrate, the cavity comprising a sidewall portion and a lower surface; directing depositing species to the surface of the substrate, wherein the depositing species condense to form a fill material on the sidewall portion and lower surface; and directing angled ions at the cavity at a non-zero angle of incidence with respect to a perpendicular to a plane defined by the substrate, wherein the angled ions strike an exposed part of the sidewall portion and do not strike the lower surface, and wherein the cavity is filled by the fill material in a bottom-up fill process.

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

Process for manufacturing a printhead for a 3D manufacturing system that uses metal electrodeposition to construct parts. The printhead may be constructed by depositing layers on top of a backplane that contains control and power circuits. Deposited layers may include insulating layers and an anode layer that contain deposition anodes that are in contact with the electrolyte to drive electrodeposition. Insulating layers may for example be constructed of silicon nitride or silicon dioxide; the anode layer may contain an insoluble conductive material such as platinum group metals and their associated oxides, highly doped semiconducting materials, and carbon based conductors. The anode layer may be deposited using chemical vapor deposition or physical vapor deposition. Alternatively in one or more embodiments the printhead may be constructed by manufacturing a separate anode plane component, and then bonding the anode plane to the backplane.