Patent classifications
C23C16/045
COMPOSITIONS AND METHODS USING SAME FOR NON-CONFORMAL DEPOSITION OF SILICON CONTAINING FILMS
An atomic layer deposition method for depositing a non-conformal silicon and oxygen containing film into surface features comprising vias and/or trenches on one or more substrates.
Photodetector based on PtSe2 and silicon nanopillar array and preparation method thereof
A photodetector based on PtSe.sub.2 and a silicon nanopillar array includes a PMMA light-transmitting protective layer, a graphene transparent top electrode, a silicon nanopillar array structure coated with few-layer PtSe.sub.2, and metal electrodes of the graphene transparent top electrode and the silicon nanopillar array structure. A method for preparing the photodetector includes steps of: preparing graphene with a CVD method; preparing a silicon nanopillar array structure through dry etching; coating few-layer PtSe.sub.2 on surfaces of the silicon nano-pillar array structure through laser interference enhanced induction CVD; preparing graphene transparent top electrode; and magnetron-sputtering metal electrodes. The photodetector prepared by the present invention has a detection range from visible light to near-infrared wavebands. The silicon nanopillar array structure enhances light absorption of the detector, so that the detector has high sensitivity, simple structure and strong practicability.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
A substrate processing method and a substrate processing device capable of obtaining good embedding characteristics are provided. The substrate processing method includes: embedding a first insulating film in a recess of a substrate by repeating forming an adsorption layer on the substrate by supplying a silicon-containing gas and causing plasma of a reaction gas to react with the adsorption layer by generating the plasma of the reaction gas; and etching the first insulating film by generating plasma of an etching gas, wherein a shape of the first insulating film embedded in the recess after etching is controlled by controlling plasma generation parameters in the causing the plasma to react with the adsorption layer.
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
There is provided a technique that includes: (a) forming a film formation suppression layer on a surface of a first material of a concave portion of the substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element; and (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material.
Quantum Printing Apparatus and Method of Using Same
The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.
DEVICE AND METHOD FOR COATING CHANNELS OF A SAMPLE BY MEANS OF VAPOR DEPOSITION
A method for coating one or more channels of a sample using a vapor deposition includes alternatingly supplying at least two gaseous precursor to one or more channels defined in a sample through at least one feed line that is connected to a first channel end of the one or more channels. An adjustable pressure gradient is generated and conducts the at least two gaseous precursors along a first flow direction (SR1) from the at least one feed line to a first discharge line through the one or more channels. The at least two gaseous precursor and reaction products are discharged from the one or more channels through a first discharge line that is connected to a second channel end of the one or more channels of the sample. Non-reacted precursors and reaction products are discharged through a second discharge line that is connected to the first channel end.
BIOPHARMACEUTICAL MANUFACTURING PROCESS AND PRODUCT
Pharmaceutical manufacturing processes and products are disclosed. A pharmaceutical manufacturing process includes flowing a liquid through a pathway. The liquid contacts a non-polymeric coating on a substrate within the pathway. The substrate is a metal or metallic substrate. A pharmaceutical product is produced by flowing a liquid through a pathway. The liquid contacts a non-polymeric coating on a substrate within the pathway. The substrate is a metal or metallic substrate.
METHOD OF FILLING GAP WITH FLOWABLE CARBON LAYER
Methods and systems for forming a structure including multiple carbon layers and structures formed using the methods or systems are disclosed. Exemplary methods include forming a first carbon layer with an initial first flowability and a second carbon layer with an initial second flowability, wherein first flowability is less than second flowability.
Ceramic matrix composite component having low density core and method of making
Disclosed is a ceramic matrix component having a fibrous core and a ceramic matrix composite shell surrounding at least a portion of the fibrous core. The ceramic matrix composite shell comprises a fibrous preform. The fibrous core has a greater porosity than the fibrous preform. A method of making the ceramic matrix component is also disclosed.
Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.