A method for forming an oligomer-containing layer on a substrate and in a concave portion formed on the substrate by performing a cycle a predetermined number of times under a first temperature, the cycle including supplying a precursor gas to the substrate, and supplying first and second nitrogen- and hydrogen-containing gases to the substrate, so an oligomer including an element in at least one selected from the group of the precursor gas, and the first and second nitrogen-hydrogen-containing gasses, flowed in the concave portion, and (b) forming a film to fill the inside of the concave portion by post-treating the substrate, which has the oligomer-containing layer formed on the surface of the substrate and in the concave portion, under a second temperature not less than the first temperature, so that the oligomer-containing layer formed in the concave portion is modified to form the film.

Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.

Proposed are a part having a corrosion-resistant layer that minimizes peeling off and particle generation of a porous ceramic layer, a manufacturing process apparatus having the same, and a method of manufacturing the part.

Methods of forming a ceramic matrix, as well as fiber preforms and methods of forming fiber preforms to facilitate formation of a ceramic matrix are provided. The method includes obtaining a fiber preform to facilitate forming the ceramic matrix. The fiber preform includes a fiber layer with a plurality of fibers and a heating element embedded within the fiber preform. The method also includes heating the fiber preform via the heating element embedded within the fiber preform, and depositing matrix material into the fiber preform by embedded wire chemical vapor deposition (EWCVD) of the matrix material during the heating of the fiber preform by the heating element. The chemical vapor deposition of the matrix material within the fiber preform facilitates formation of the ceramic matrix.

According to one embodiment of the present invention, a method for forming a thin film using a surface protection material comprises: a surface protection layer forming step of forming a surface protection layer on the surface of a substrate by supplying a surface protection material to the inside of a chamber in which the substrate is placed; a step of performing a primary purging of the inside of the chamber; a metal precursor supply step of supplying a metal precursor to the inside of the chamber; a step of performing a secondary purging of the inside of the chamber; and a thin film forming step of supplying a reactive material to the inside of the chamber so as to react with the metal precursor and form a thin film.

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

A process for manufacturing a friction component made of composite material, includes the densification of a fibrous preform of carbon yarns by a matrix including at least pyrocarbon and at least one ZrO.sub.xC.sub.y phase, where 1≤x≤2 and 0≤y≤1, the matrix being formed by chemical vapor infiltration at least from a first gaseous precursor of pyrocarbon and a second gaseous precursor including zirconium, the second precursor being an alcohol or a C.sub.1 to C.sub.6 polyalcohol modified by linking the oxygen atom of at least one alcohol function to a group of formula —Zr—R.sub.3, the substituents R being identical or different, and R being selected from: —H, C.sub.1 to C.sub.5 carbon chains and halogen atoms.

A method includes placing a semiconductor substrate in a deposition chamber, wherein the semiconductor substrate includes a trench, and performing an atomic layer deposition (ALD) process to deposit a dielectric material within the trench, including flowing a first precursor of the dielectric material into the deposition chamber as a gas phase; flowing a second precursor of the dielectric material into the deposition chamber as a gas phase; and controlling the pressure and temperature within the deposition chamber such that the second precursor condenses on surfaces within the trench as a liquid phase of the second precursor, wherein the liquid phase of the second precursor has capillarity.

A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber.

Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern. Therefore, a residue is not remained when the mask pattern is removed to prevent a defect caused by the residue from being generated.

A method for processing a substrate includes performing a cyclic plasma process including a plurality of cycles, each cycle of the plurality of cycles including purging a plasma processing chamber including the substrate with a first deposition gas including carbon. The substrate includes a first layer including silicon and a second layer including a metal oxide. The method further includes exposing the substrate to a first plasma generated from the first deposition gas to selectively deposit a first polymeric film over the first layer relative to the second layer; purging the plasma processing chamber with an etch gas including fluorine; and exposing the substrate to a second plasma generated from the etch gas to etch the second layer.