A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which R.sup.f is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2:
(R.sup.fCH.sub.2).sub.nSnX.sub.(4-n)  (I).

Redeposition of substrate material on a fiducial resulting from charged particle beam (CPB) or laser beam milling of a substrate can be reduced with a shield formed on the substrate surface. The shield typically has a suitable height that can be selected based on proximity of an area to be milled to the fiducial. The shield can be formed with the milling beam using beam-assisted chemical vapor deposition (CVD). The same or different beams can be used for milling and beam-assisted CVD.

Graphene printing is disclosed. A disclosed example graphene printing apparatus includes a gas source to cause a graphene precursor gas to flow across a surface of a substrate, and a localized heat source to locally heat portions of the surface to cause graphene to grow at the portions of the surface based on a printing pattern.

In a method, a charged metal dot is deposited on a first position of a surface of a semiconductor substrate. Then, a charged region is formed on a second position of the surface of the semiconductor substrate, thereby establishing of which an electric field direction from the first position toward the second position. The first position is spaced apart from the second position by a distance. Thereafter, a precursor gas flows along the electric field direction on the semiconductor substrate, thereby forming a carbon nanotube (CNT) on the semiconductor substrate.

A composite tape and method of fabrication are provided which includes multiple layers and a laser-driven chemical vapor deposition (LCVD)-formed additive material in at least one layer of the multiple layers to enhance one or more properties of the composite tape. The LCVD-formed additive material is a single crystalline material and can include LCVD-formed granular material and/or LCVD-formed fiber material in the same or different layers of the composite tape to enhance, for instance, fracture strength and/or wear resistance of the composite tape.

In one embodiment, a method of selectively forming a deposit may include

providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

A method for modifying a portion of a substrate after production is described herein. The method can include diagnosing a circuit operation error causing a malfunction, identifying a first contact on the substrate, and connecting, electrically, the first contact to a second contact with at least one trace. The trace is done with a focused ion beam. The method can include diagnosing an error on an operative area of a post-manufacture circuit board causing a malfunction; introducing a metal precursor into a focused ion beam chamber; ionizing the metal precursor by contacting it with a gallium ion beam into a conductive metal and a further ion; depositing a first portion of a conductive metal onto a substrate to form a first trace; and forming the first trace between the operative area and a non-operative area thereby connecting the operative area and the non-operative area.

A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.