A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.

A graphene fabrication method which can obtain graphene of high quality and good characteristics by adjusting a size and a shape of a domain of graphene is provided. The method for fabricating graphene according to the present disclosure includes: a graphene pattern forming step of forming a graphene forming pattern on a graphene growth substrate; and a graphene forming step of forming a graphene layer on the graphene growth substrate having the graphene forming pattern formed thereon.

A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

According to one embodiment, a processing apparatus includes a chamber, a first gas introduction port that introduces a first gas into the chamber, a first gas discharge port that discharges the first gas from the chamber, and a stage that supports a processing object in the chamber. The processing apparatus has a plasma generating section with an electrode to generate a plasma in the chamber. The processing apparatus includes a shield at a first position that is between the plasma generating section and the stage. The shield is light transmissive, but blocks radicals and ions generated with plasma. In some examples, the shield may be moveable from the first position to another position that is not between the plasma generating section and the stage.

This invention claims a method for creating patterns of carbon or other elements as deposits on the surface of substrates or as self-supporting filaments in liquid or solid media by the selected application of directed energy. In some embodiments, the deposits or filaments may be of primary interest because of their mechanical properties. In other embodiments, the patterns may have useful physical properties such as being electrically conductive, semi-conductive or electric insulators. Many different deposit precursors, types of directed energy, and adjunct reagents are described. The invention anticipates numerous different embodiments created by selecting various combinations of these elements and sequences of application as a means to build complex devices. In particular, the patterns may constitute the elements of an electric circuit or device (e.g., wires, capacitors, diodes, transistors).

Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

Methods for regulating and continuously monitoring a chemical synthesis reaction using micro-objects and electro-magnetic radiation include introducing micro-objects to a reaction mixture, determining a plasmon resonance of the micro-object based on a characteristic of the micro-object, and applying electro-magnetic radiation that is wavelength-matched to the plasmon resonance of the micro-object.

A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising a process chamber containing a platen for supporting a substrate, and a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained at a second pressure greater than the first pressure for driving the free radicals from the plasma chamber into the process chamber.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.