A heterogeneous polynuclear complex for use as a raw material in the chemical deposition of composite metal or composite metal thin films with the below formula. In the formula, M.sub.1 and M.sub.2 are mutually different transition metals, x is an integer of 0 or more and 2 or less, y is in integer of 1 or more and 2 or less, z is an integer of 1 or more and 10 or less, R.sub.1 to R.sub.4 are each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less, and R.sub.5 is a hydrogen atom, a carbonyl, an alkyl group with a carbon number of 1 or more and 7 or less, an allyl group or an allyl derivative. The heterogeneous polynuclear complex allows a composite metal thin film or a composite metal compound thin film containing a plurality of metals to be formed from a single raw material. ##STR00001##

Methods are described for protecting cobalt (Co) metal plugs used for making electrical connections within a semiconductor device. In one example, method includes providing a substrate containing a Co metal plug in a dielectric layer, and selectively forming a ruthenium (Ru) metal cap layer on the Co metal plug. In another example, the method includes providing a substrate containing a Co metal plug in a first dielectric layer, selectively forming a Ru metal cap layer on the Co metal plug, depositing a second dielectric layer on the Ru metal cap layer and on the first dielectric layer, etching a recessed feature in the second dielectric layer to expose the Ru metal cap layer, and performing a cleaning process that removes polymer etch residue from the Ru metal cap layer in the recessed feature.

A method of forming a RuSi film, the method includes adsorbing silicon in a recess that is formed in a substrate and includes an insulating film by supplying a silicon-containing gas to the substrate, forming a Ru film in the recess by supplying a Ru-containing precursor to the recess in which the silicon is adsorbed, and forming a RuSi film by supplying a silicon-containing gas to the recess in which the Ru film is formed.

An embedding method includes: preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess; embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature; and embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature.

An embedding method includes: preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess; embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature; and embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature.

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (M.sub.1) and the second transition metal (M.sub.2) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R.sub.1 to R.sub.5. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material.

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A shower head assembly, which is disposed in a film forming apparatus that alternately repeats film formation and etching to form a metal film in a recess formed in a substrate, includes: a first plate having arc-shaped first slits formed in the first plate; and a second plate having arc-shaped second slits formed in the second plate, wherein the second plate is disposed below the first plate to vertically overlap with the first plate, and the second slits are formed at locations such that the second slits do not overlap with the first slits in a plan view.

A shower head assembly, which is disposed in a film forming apparatus that alternately repeats film formation and etching to form a metal film in a recess formed in a substrate, includes: a first plate having arc-shaped first slits formed in the first plate; and a second plate having arc-shaped second slits formed in the second plate, wherein the second plate is disposed below the first plate to vertically overlap with the first plate, and the second slits are formed at locations such that the second slits do not overlap with the first slits in a plan view.