To provide a concentration measurement method with which the concentrations of predetermined chemical components can be measured non-destructively, accurately, and rapidly by a simple means, up to the concentrations in trace amount ranges, as well as a concentration measurement method with which the concentrations of chemical components in a measurement target can be accurately and rapidly measured in real time up to the concentrations in nano-order trace amount ranges, and which is endowed with a versatility that can be realized in a variety of embodiments and modes. In the present invention, a measurement target is irradiated, in a time sharing manner, with light of a first wavelength and light of a second wavelength that have different optical absorption rates with respect to the measurement target. The light of each wavelength, arriving optically via the measurement target as a result of irradiation with the light of each wavelength, is received at a shared light-receiving sensor. A differential signal is formed, the differential signal being of a signal pertaining to the light of the first wavelength and a signal pertaining to the light of the second wavelength, the signals outputted from the light-receiving sensor upon receipt of the light. The concentration of a chemical component in the measurement target is derived on the basis of the differential signal.

To provide a concentration measurement method with which the concentrations of predetermined chemical components can be measured non-destructively, accurately, and rapidly by a simple means, up to the concentrations in trace amount ranges, as well as a concentration measurement method with which the concentrations of chemical components in a measurement target can be accurately and rapidly measured in real time up to the concentrations in nano-order trace amount ranges, and which is endowed with a versatility that can be realized in a variety of embodiments and modes. In the present invention, a measurement target is irradiated, in a time sharing manner, with light of a first wavelength and light of a second wavelength that have different optical absorption rates with respect to the measurement target. The light of each wavelength, arriving optically via the measurement target as a result of irradiation with the light of each wavelength, is received at a shared light-receiving sensor. A differential signal is formed, the differential signal being of a signal pertaining to the light of the first wavelength and a signal pertaining to the light of the second wavelength, the signals outputted from the light-receiving sensor upon receipt of the light. The concentration of a chemical component in the measurement target is derived on the basis of the differential signal.

The present invention relates to a gas distributing injector applied in MOCVD reactor. The gas distributing injector comprises at least one gas distributing layer for distributing different gases. The distributing layer is a single-layered structure. The distributing layer comprises a disk-shaped body, a plurality of first gas channels, a plurality of second gas channels, and a plurality of third gas channels. The first gas channels, the second gas channels, and the third gas channels are radially distributed on the same plane in the disk-shaped body. Different gases are distributed or fed into different gas channels (such as the first gas channels, the second gas channels, and the third gas channels) and transported by different gas channels. Through different gas channels, different gases are transversely injected into the MOCVD reactor on the same plane respectively. Therefore, the gas distributing injector of this invention can distribute different gases by a single-layered structure.

The present invention relates to a gas distributing injector applied in MOCVD reactor. The gas distributing injector comprises at least one gas distributing layer for distributing different gases. The distributing layer is a single-layered structure. The distributing layer comprises a disk-shaped body, a plurality of first gas channels, a plurality of second gas channels, and a plurality of third gas channels. The first gas channels, the second gas channels, and the third gas channels are radially distributed on the same plane in the disk-shaped body. Different gases are distributed or fed into different gas channels (such as the first gas channels, the second gas channels, and the third gas channels) and transported by different gas channels. Through different gas channels, different gases are transversely injected into the MOCVD reactor on the same plane respectively. Therefore, the gas distributing injector of this invention can distribute different gases by a single-layered structure.

The invention relates to a two-stage synthesis for the production of bis(tertbutylimido)bis(dialkylamido)tungsten compounds according to the general formula [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I), starting from [W(NtBu).sub.2(NHtBu).sub.2]. The invention also relates to compounds according to the general formula [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I), obtainable according to the claimed method, compounds according to general formula [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I), with the exception of [W(NtBu).sub.2(NMe.sub.2).sub.2] and [W(NtBu).sub.2(NEtMe).sub.2], the use of a compound [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I), and a substrate which, on a surface, has a tungsten layer or a tungsten-containing layer. Defined bis(tertbutylimido)bis(dialkylamido)tungsten compounds of the type [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I) can be produced easily, economically and reproducibly in high purity and good yields by means of the described method. On account of their high purity, the compounds are suitable for producing high-quality substrates which have tungsten layers or tungsten-containing layers.

The invention relates to a two-stage synthesis for the production of bis(tertbutylimido)bis(dialkylamido)tungsten compounds according to the general formula [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I), starting from [W(NtBu).sub.2(NHtBu).sub.2]. The invention also relates to compounds according to the general formula [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I), obtainable according to the claimed method, compounds according to general formula [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I), with the exception of [W(NtBu).sub.2(NMe.sub.2).sub.2] and [W(NtBu).sub.2(NEtMe).sub.2], the use of a compound [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I), and a substrate which, on a surface, has a tungsten layer or a tungsten-containing layer. Defined bis(tertbutylimido)bis(dialkylamido)tungsten compounds of the type [W(NtBu).sub.2(NR.sup.AR.sup.B).sub.2] (I) can be produced easily, economically and reproducibly in high purity and good yields by means of the described method. On account of their high purity, the compounds are suitable for producing high-quality substrates which have tungsten layers or tungsten-containing layers.

A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250° C. as film formation conditions ##STR00001##
(In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. R.sub.1 to R.sub.5 which are substituent groups of the cyclopentadienyl group represent C.sub.nH.sub.2n+1 and n represents an integer of 0 to 6).

A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250° C. as film formation conditions ##STR00001##
(In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. R.sub.1 to R.sub.5 which are substituent groups of the cyclopentadienyl group represent C.sub.nH.sub.2n+1 and n represents an integer of 0 to 6).

The present application discloses a manufacturing method for a graphene film, a porous silica powder and a transparent conductive layer. The manufacturing method for a graphene film includes steps of: providing a porous material powder; placing the porous material powder in an atomic layer deposition device; forming a porous material template having a metal catalyst layer in pores; and preparing the graphene film on the porous material template.

The present application discloses a manufacturing method for a graphene film, a porous silica powder and a transparent conductive layer. The manufacturing method for a graphene film includes steps of: providing a porous material powder; placing the porous material powder in an atomic layer deposition device; forming a porous material template having a metal catalyst layer in pores; and preparing the graphene film on the porous material template.