Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system tor forming the material are also disclosed.

A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system tor forming the material are also disclosed.

The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L.sub.1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L.sub.1 is represented by the following Formula 2:

##STR00001## wherein a substituent R of the ligand L.sub.1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L.sub.1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L.sub.1 is represented by the following Formula 2:

##STR00001## wherein a substituent R of the ligand L.sub.1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.

The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method comprises filling the gap with a metal-containing material.