The present invention decreases the impurity concentration of polycrystalline silicon to be produced. An apparatus (1) for producing polycrystalline silicon (S1) includes: a reactor (10) that contains a raw material gas (G1) for silicon deposition; a feed pipe (20) that forms a feed channel for feeding the raw material gas (G1) into the reactor (10), the feed pipe (20) including an inflow port (111) which is formed in the reactor (10) and through which the raw material gas (G1) flows in; and a filter (30) for removing impurities which have mixed in the raw material gas (G1), the filter (30) being provided in the feed channel.

A quality evaluation method has a step of producing a silicon for evaluation in which a single crystal silicon is grown to extend radially from a core wire 9 while polycrystalline silicon is grown in a reactor 20; and a step of performing an evaluation using the single crystal silicon.

A quality evaluation method has a step of producing a silicon for evaluation in which a single crystal silicon is grown to extend radially from a core wire 9 while polycrystalline silicon is grown in a reactor 20; and a step of performing an evaluation using the single crystal silicon.

According to one aspect of a technique the present disclosure, there is provided a processing apparatus including: an inner tube provided with a substrate accommodating region in which substrates are accommodated along an arrangement direction; an outer tube provided outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at a lower end portion of the outer tube; and a gas guide for controlling a flow of gas in an annular space between the inner tube and the outer tube and including a first fin near a lowermost first exhaust port among the first exhaust ports that is closest to the second exhaust port in a space between the lowermost first exhaust port and the second exhaust port.

A rechargeable battery includes at least an electrolyte layer, a cathode layer and an anode layer. The electrolyte layer includes a lithium salt compound arranged between a cathode surface of the cathode layer and an anode surface of the anode layer. The anode layer is a nanostructured silicon containing thin film layer including a plurality of columns, wherein the columns are directed in a first direction perpendicular or substantially perpendicular to the anode surface of the silicon thin film layer. The columns are arranged adjacent to each other while separated by grain-like column boundaries running along the first direction. The columns include silicon and have an amorphous structure in which nano-crystalline regions exist.

A rechargeable battery includes at least an electrolyte layer, a cathode layer and an anode layer. The electrolyte layer includes a lithium salt compound arranged between a cathode surface of the cathode layer and an anode surface of the anode layer. The anode layer is a nanostructured silicon containing thin film layer including a plurality of columns, wherein the columns are directed in a first direction perpendicular or substantially perpendicular to the anode surface of the silicon thin film layer. The columns are arranged adjacent to each other while separated by grain-like column boundaries running along the first direction. The columns include silicon and have an amorphous structure in which nano-crystalline regions exist.

In the silicon core wire according to a first aspect of the present invention, a male thread part formed at one end of a first thin silicon rod and a female thread part formed at one end of a second thin silicon rod may be screwed together and fastened. In the silicon core wire according to a second aspect of the present invention, a thread part formed at one end of a first thin silicon rod and a thread part formed at one end of a second thin silicon rod may be screwed together and fastened via an adapter with thread parts formed at both ends.

In the silicon core wire according to a first aspect of the present invention, a male thread part formed at one end of a first thin silicon rod and a female thread part formed at one end of a second thin silicon rod may be screwed together and fastened. In the silicon core wire according to a second aspect of the present invention, a thread part formed at one end of a first thin silicon rod and a thread part formed at one end of a second thin silicon rod may be screwed together and fastened via an adapter with thread parts formed at both ends.

A vapor deposition device is provided that can correct a positional offset of a carrier in a rotation direction relative to a wafer when the vapor deposition device is viewed in a plan view. The vapor deposition device includes a load-lock chamber provided with a holder for supporting the carrier, and the carrier and the holder are provided with a correction mechanism that corrects a position of the carrier in a rotation direction when the vapor deposition device is viewed in a plan view.

A vapor deposition device is provided that can correct a positional offset of a carrier in a rotation direction relative to a wafer when the vapor deposition device is viewed in a plan view. The vapor deposition device includes a load-lock chamber provided with a holder for supporting the carrier, and the carrier and the holder are provided with a correction mechanism that corrects a position of the carrier in a rotation direction when the vapor deposition device is viewed in a plan view.