The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

A method or process for producing non-aggregated carbon-coated silicon particles and lithium-ion batteries utilizing the same. The process includes providing or producing a dry mixture by mixing silicon particles and polyacrylonitrile present in solid form. Thermally decomposing the polyacrylonitrile present in solid form in the dry mixture to form gaseous carbon precursors. Forming gaseous carbon precursors that are carbonized in the presence of the silicon particles by CVD processes (chemical vapor deposition, chemical gas phase deposition). Where the non-aggregated carbon-coated silicon particles have an average particle diameters d.sub.50 of from 1 to 15 μm and containing ≤10% by weight of carbon and ≥90% by weight of silicon, each based on the total weight of the carbon-coated silicon particles.

A method or process for producing non-aggregated carbon-coated silicon particles and lithium-ion batteries utilizing the same. The process includes providing or producing a dry mixture by mixing silicon particles and polyacrylonitrile present in solid form. Thermally decomposing the polyacrylonitrile present in solid form in the dry mixture to form gaseous carbon precursors. Forming gaseous carbon precursors that are carbonized in the presence of the silicon particles by CVD processes (chemical vapor deposition, chemical gas phase deposition). Where the non-aggregated carbon-coated silicon particles have an average particle diameters d.sub.50 of from 1 to 15 μm and containing ≤10% by weight of carbon and ≥90% by weight of silicon, each based on the total weight of the carbon-coated silicon particles.

A process for large-scale production of graphene comprising a step of applying graphene onto a movable surface carrying multiple particles using a PECVD-based process operating at low temperatures enabling the coating of materials that are at risk of melting, decomposing or deforming at higher temperatures. The graphene can be separated from said particles, and the particles re-circulated in the process. A production unit designed for continuous or semi-continuous large-scale production of graphene and graphene-coated particles, where said graphene-coated particles are either the desired end-product, or an intermediate. Graphene-coated particles, in particular particles where the graphene forms flakes having a desired orientation in relation to a surface of said particles.

A process for large-scale production of graphene comprising a step of applying graphene onto a movable surface carrying multiple particles using a PECVD-based process operating at low temperatures enabling the coating of materials that are at risk of melting, decomposing or deforming at higher temperatures. The graphene can be separated from said particles, and the particles re-circulated in the process. A production unit designed for continuous or semi-continuous large-scale production of graphene and graphene-coated particles, where said graphene-coated particles are either the desired end-product, or an intermediate. Graphene-coated particles, in particular particles where the graphene forms flakes having a desired orientation in relation to a surface of said particles.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

A particulate for an additive manufacturing technique includes a particulate body formed from a particulate material and a coating disposed over particulate body. The coating includes a carbonaceous material that has a reflectivity that is lower than a reflectivity of the particulate material to reduce an energy input requirement of the particulate such that less energy is necessary to fuse the particulate into a layer of an article fabricated using the additive manufacturing technique. A method of making particulate is also disclosed.

A particulate for an additive manufacturing technique includes a particulate body formed from a particulate material and a coating disposed over particulate body. The coating includes a carbonaceous material that has a reflectivity that is lower than a reflectivity of the particulate material to reduce an energy input requirement of the particulate such that less energy is necessary to fuse the particulate into a layer of an article fabricated using the additive manufacturing technique. A method of making particulate is also disclosed.

A process for preparing a support comprises the placing of a substrate on a susceptor in a chamber of a deposition system, the susceptor having an exposed surface not covered by the substrate; the flowing of a precursor containing carbon in the chamber at a deposition temperature so as to form at least one layer on an exposed face of the substrate, while at the same time depositing species of carbon and of silicon on the exposed surface of the susceptor. The process also comprises, directly after the removal of the substrate from the chamber, a first etch step consisting of the flowing of an etch gas in the chamber at a first etching temperature not higher than the deposition temperature so as to eliminate at least some of the species of carbon and silicon deposited on the susceptor.