A process for preparing a support comprises the placing of a substrate on a susceptor in a chamber of a deposition system, the susceptor having an exposed surface not covered by the substrate; the flowing of a precursor containing carbon in the chamber at a deposition temperature so as to form at least one layer on an exposed face of the substrate, while at the same time depositing species of carbon and of silicon on the exposed surface of the susceptor. The process also comprises, directly after the removal of the substrate from the chamber, a first etch step consisting of the flowing of an etch gas in the chamber at a first etching temperature not higher than the deposition temperature so as to eliminate at least some of the species of carbon and silicon deposited on the susceptor.

Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

Methods and apparatus for depositing carbon nanostructures such as three-dimensional graphene mesh using non-equilibrium gaseous plasma of high power density. Methods are disclosed for rapid deposition of randomly distributed graphene sheets on surfaces of substrates using decomposition of CO molecules of a high potential energy, and said excited CO molecules interacting with a substrate. The three-dimensional graphene mesh prepared according to the methods are useful in different applications such as light absorbents, fuel cells, super-capacitors, batteries, photovoltaic devices and sensors of specific gaseous molecules.

Methods and apparatus for depositing carbon nanostructures such as three-dimensional graphene mesh using non-equilibrium gaseous plasma of high power density. Methods are disclosed for rapid deposition of randomly distributed graphene sheets on surfaces of substrates using decomposition of CO molecules of a high potential energy, and said excited CO molecules interacting with a substrate. The three-dimensional graphene mesh prepared according to the methods are useful in different applications such as light absorbents, fuel cells, super-capacitors, batteries, photovoltaic devices and sensors of specific gaseous molecules.

The present invention provides a method of manufacturing of an electrostatic self-assembled Silicon/rGO/carbon nanofibers composite, the method including: (a) obtaining a Si@APTES solution by adding predetermined Si nanoparticles to the piranha solution, and stirring, filtering, washing and drying, and then, dispersing the dried Si nanoparticles in deionized water, by adding APTES, and then stirring; (b) obtaining a Si@N-doped GO dispersion by mixing a mixture with the addition of urea (CH4N2O) to the GO solution and the prepared Si@APTES in step (a) in an ethanol aqueous solution; (c) obtaining a Si@N-doped GO/CNF composite by adding a predetermined CNF to the prepared Si@N-doped GO dispersion in step (b) and stirring it; and (d) obtaining a thermally reduced Si@N-doped rGO/CNF composite through a heat treatment process to the prepared Si@N-doped GO/CNF composite in step (c).

The present invention provides a method of manufacturing of an electrostatic self-assembled Silicon/rGO/carbon nanofibers composite, the method including: (a) obtaining a Si@APTES solution by adding predetermined Si nanoparticles to the piranha solution, and stirring, filtering, washing and drying, and then, dispersing the dried Si nanoparticles in deionized water, by adding APTES, and then stirring; (b) obtaining a Si@N-doped GO dispersion by mixing a mixture with the addition of urea (CH4N2O) to the GO solution and the prepared Si@APTES in step (a) in an ethanol aqueous solution; (c) obtaining a Si@N-doped GO/CNF composite by adding a predetermined CNF to the prepared Si@N-doped GO dispersion in step (b) and stirring it; and (d) obtaining a thermally reduced Si@N-doped rGO/CNF composite through a heat treatment process to the prepared Si@N-doped GO/CNF composite in step (c).

A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.