The present disclosure is related to a method for applying a functional compound on sulfur particles by means of an atmospheric pressure plasma discharge including a gas or an activated gas flow resulting from the atmospheric pressure plasma discharge. The coating composition includes an inorganic electrically conductive compound, an electrically conductive carbon compound, an organic precursor compound of a conjugated polymer, a precursor of a hybrid organic-inorganic compound, or a mixture, and the functional compound provides the sulfur particles with an electrically conductive surface.

The present disclosure is related to a method for applying a functional compound on sulfur particles by means of an atmospheric pressure plasma discharge including a gas or an activated gas flow resulting from the atmospheric pressure plasma discharge. The coating composition includes an inorganic electrically conductive compound, an electrically conductive carbon compound, an organic precursor compound of a conjugated polymer, a precursor of a hybrid organic-inorganic compound, or a mixture, and the functional compound provides the sulfur particles with an electrically conductive surface.

An electrode for an electrochemical reaction bath has a base body, an active side which is configured to come into contact with the reaction bath, and a passive side which is configured to come into contact with at least one electrical conductor. The passive side includes a doped carbon coating that is preferably less than 5 μm in thickness. Preferably the doped carbon coating is a doped polycrystalline diamond coating in sp.sup.3 configuration and is doped with boron.

An electrode for an electrochemical reaction bath has a base body, an active side which is configured to come into contact with the reaction bath, and a passive side which is configured to come into contact with at least one electrical conductor. The passive side includes a doped carbon coating that is preferably less than 5 μm in thickness. Preferably the doped carbon coating is a doped polycrystalline diamond coating in sp.sup.3 configuration and is doped with boron.

Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.

Various embodiments generally relate to a method for forming a graphene barrier layer for a semiconductor device, and more particularly, to a method of forming a barrier thin film including a graphene layer capable of reducing the contact resistance of a metal interconnect. A method for forming a graphene barrier layer according to an embodiment includes: loading a substrate, which has a titanium-containing layer formed thereon, in a chamber of a substrate processing system, the chamber having a processing space formed therein; inducing nucleation on the titanium-containing layer by supplying a first reactant gas including a unsaturated hydrocarbon into the chamber; and forming a graphene layer on the titanium-containing layer by supplying a second reactant gas including a saturated hydrocarbon into the chamber.

A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.

Provided are a layer structure including a carbon-based material, a method of manufacturing the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure may include a lower layer, an ion implantation layer in the lower layer, and a carbon-based material layer on the ion implantation layer, wherein the ion implantation layer includes carbon. The ion implantation layer may include a trench, and the carbon-based material layer may be provided in the trench. The carbon-based material layer may be formed to coat an inner surface of the trench. The carbon-based material layer may fill at least a portion of the trench. The ion implantation concentration of the ion implantation layer may be uniform as a whole. The ion implantation layer may have an ion implantation concentration gradient in a given direction.

Provided are a layer structure including a carbon-based material, a method of manufacturing the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure may include a lower layer, an ion implantation layer in the lower layer, and a carbon-based material layer on the ion implantation layer, wherein the ion implantation layer includes carbon. The ion implantation layer may include a trench, and the carbon-based material layer may be provided in the trench. The carbon-based material layer may be formed to coat an inner surface of the trench. The carbon-based material layer may fill at least a portion of the trench. The ion implantation concentration of the ion implantation layer may be uniform as a whole. The ion implantation layer may have an ion implantation concentration gradient in a given direction.

A method for coating a metal workpiece with graphene includes exposing the metal workpiece to a carbon-containing precursor gas and a hydrogen gas in a processing chamber in a first phase, and to the carbon-containing precursor gas, the hydrogen gas and a first carrier gas in the processing chamber in a second phase after the first phase. A first flow rate of the carbon-containing precursor gas into the processing chamber is higher than a second flow rate of the carbon-containing precursor gas into the processing chamber, and a first flow rate of the hydrogen gas into the processing chamber is higher than a second flow rate of the hydrogen gas into the processing chamber. A first total gas pressure in the processing chamber in the first phase is lower than a second total gas pressure in the processing chamber in the second phase.