Provided is a cutting tool comprising a base body and a hard carbon film arranged on the base body, in which the hard carbon film includes an amorphous phase and a graphite phase, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the degree of orientation of the graphite phase is no more than 6.

A method for making a strain sensor is provided. The method includes growing an iron (Fe) thin seed layer with patterns on a top surface of a silicon oxide isolation layer formed on a top surface of a silicon wafer; synthesizing a plurality of vertically aligned carbon nanotubes (VACNTs) on top surfaces of the iron (Fe) thin seed layer to form electrodes of the strain sensor;

forming a first polydimethylsiloxane (PDMS) layer disposed on and between adjacent VACNTs of the plurality of VACNTs; peeling the first PDMS layer and the plurality of VACNTs embedded in the first PDMS layer off from the top surface of the silicon oxide isolation layer; and forming a second PDMS layer on a bottom surface of the plurality of VACNTs embedded in the first PDMS layer.

A method for making a strain sensor is provided. The method includes growing an iron (Fe) thin seed layer with patterns on a top surface of a silicon oxide isolation layer formed on a top surface of a silicon wafer; synthesizing a plurality of vertically aligned carbon nanotubes (VACNTs) on top surfaces of the iron (Fe) thin seed layer to form electrodes of the strain sensor;

forming a first polydimethylsiloxane (PDMS) layer disposed on and between adjacent VACNTs of the plurality of VACNTs; peeling the first PDMS layer and the plurality of VACNTs embedded in the first PDMS layer off from the top surface of the silicon oxide isolation layer; and forming a second PDMS layer on a bottom surface of the plurality of VACNTs embedded in the first PDMS layer.

Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor in a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a substrate housed in the processing region of the semiconductor processing chamber. The methods may include halting a flow of the carbon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the carbon-containing material with plasma effluents of an oxidizing material. The methods may include forming volatile materials from a surface of the carbon-containing material.

Artificial lift pump components such as couplings are disclosed, all having a body formed from a selected material, the body having an inner diameter and an outer diameter, a first surface treatment introducing carbon, nitrogen, boron into the material to form a first and hard layer, and a second layer defined as an deposited coating to the first layer that is also made of a carbon, nitrogen, or boron and is further characterized as being ceramic like (hard) and having a low-friction.

Artificial lift pump components such as couplings are disclosed, all having a body formed from a selected material, the body having an inner diameter and an outer diameter, a first surface treatment introducing carbon, nitrogen, boron into the material to form a first and hard layer, and a second layer defined as an deposited coating to the first layer that is also made of a carbon, nitrogen, or boron and is further characterized as being ceramic like (hard) and having a low-friction.

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide methods for producing reduced-stress diamond-like carbon films for patterning applications. In one or more embodiments, a method includes flowing a deposition gas containing a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck and generating a plasma above the substrate in the processing volume by applying a first RF bias to the electrostatic chuck to deposit a stressed diamond-like carbon film on the substrate. The stressed diamond-like carbon film has a compressive stress of −500 MPa or greater. The method further includes heating the stressed diamond-like carbon film to produce a reduced-stress diamond-like carbon film during a thermal annealing process. The reduced-stress diamond-like carbon film has a compressive stress of less than −500 MPa.

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing nitrogen-doped diamond-like carbon films for patterning applications. In one or more embodiments, a method for processing a substrate includes flowing a deposition gas containing a hydrocarbon compound and a nitrogen dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, and generating a plasma at or above the substrate by applying a first RF bias to the electrostatic chuck to deposit a nitrogen-doped diamond-like carbon film on the substrate. The nitrogen-doped diamond-like carbon film has a density of greater than 1.5 g/cc and a compressive stress of about −20 MPa to less than −600 MPa.

A method for densifying one or more porous substrates with pyrolytic carbon by chemical vapour infiltration, includes admitting, at the inlet of the densification furnace, a reactive gaseous phase including at least one pyrolytic carbon precursor; reacting at least a fraction of the reactive gaseous phase with the porous substrate or substrates; extracting, at the outlet of the densification furnace, gaseous effluents originating from the reactive gaseous phase; reintroducing, with the reactive gaseous phase admitted at the inlet of the densification furnace, at least a fraction of the gaseous effluents extracted at the outlet of the furnace, wherein the fraction of the gaseous effluents introduced with the reactive gaseous phase includes at least one polyaromatic hydrocarbon compound.

A method for densifying one or more porous substrates with pyrolytic carbon by chemical vapour infiltration, includes admitting, at the inlet of the densification furnace, a reactive gaseous phase including at least one pyrolytic carbon precursor; reacting at least a fraction of the reactive gaseous phase with the porous substrate or substrates; extracting, at the outlet of the densification furnace, gaseous effluents originating from the reactive gaseous phase; reintroducing, with the reactive gaseous phase admitted at the inlet of the densification furnace, at least a fraction of the gaseous effluents extracted at the outlet of the furnace, wherein the fraction of the gaseous effluents introduced with the reactive gaseous phase includes at least one polyaromatic hydrocarbon compound.