A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber. The process gas in the process chamber is brought to the substrate, and the substrate is heated to a process temperature. After a chemical reaction of the process gas, the layer forms on the surface. During or after the heating of the substrate to the process temperature, the process gas with a first mass flow rate is initially fed into the process chamber and then, while the substrate surface is being observed, the mass flow rate of the process gas is increased to a rate at which the layer growth begins, and subsequently the mass flow rate of the process gas is increased by a predetermined value, during which the layer is deposited. The beginning of the layer growth is identified by observing measurements from a pyrometer.

A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber. The process gas in the process chamber is brought to the substrate, and the substrate is heated to a process temperature. After a chemical reaction of the process gas, the layer forms on the surface. During or after the heating of the substrate to the process temperature, the process gas with a first mass flow rate is initially fed into the process chamber and then, while the substrate surface is being observed, the mass flow rate of the process gas is increased to a rate at which the layer growth begins, and subsequently the mass flow rate of the process gas is increased by a predetermined value, during which the layer is deposited. The beginning of the layer growth is identified by observing measurements from a pyrometer.

Method for making a porous graphene layer of a thickness of less than 100 nm with pores having an average size in the range of 5-900 nm, includes the following steps: providing a catalytically active substrate catalyzing graphene formation under chemical vapor deposition conditions, the catalytically active substrate in or on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; chemical vapor deposition using a carbon source in the gas phase and formation of the porous graphene layer on the surface of the catalytically active substrate. The pores in the graphene layer are in situ formed due to the presence of the catalytically inactive domains.

Method for making a porous graphene layer of a thickness of less than 100 nm with pores having an average size in the range of 5-900 nm, includes the following steps: providing a catalytically active substrate catalyzing graphene formation under chemical vapor deposition conditions, the catalytically active substrate in or on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; chemical vapor deposition using a carbon source in the gas phase and formation of the porous graphene layer on the surface of the catalytically active substrate. The pores in the graphene layer are in situ formed due to the presence of the catalytically inactive domains.

A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

Provided is a method of inspecting a growth quality of a graphene layer of a graphene-grown copper foil obtained by growing the graphene layer on a copper foil layer by chemical vapor deposition (CVD), the method including reacting oxygen or water molecules with the copper foil layer via a defect portion of the graphene layer, partitioning an entire region of the graphene-grown copper foil into partial regions, sequentially obtaining images of the partial regions, detecting, with respect to each of the images of the partial regions, an oxidized region where the copper foil layer is oxidized, and setting the oxidized region as a graphene defect region, and obtaining a ratio of an area of the graphene defect region to an entire area of each of the images of the partial regions.

Provided is a method of inspecting a growth quality of a graphene layer of a graphene-grown copper foil obtained by growing the graphene layer on a copper foil layer by chemical vapor deposition (CVD), the method including reacting oxygen or water molecules with the copper foil layer via a defect portion of the graphene layer, partitioning an entire region of the graphene-grown copper foil into partial regions, sequentially obtaining images of the partial regions, detecting, with respect to each of the images of the partial regions, an oxidized region where the copper foil layer is oxidized, and setting the oxidized region as a graphene defect region, and obtaining a ratio of an area of the graphene defect region to an entire area of each of the images of the partial regions.

Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.

Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.