A method, system and apparatus for selective deposition on a substrate, comprising providing the substrate in a reaction chamber, the substrate comprising a first surface and a second surface, wherein the first surface is materially different from the second surface, wherein the first surface is a metal oxide, metal nitride, metal oxynitride, or a metal carbide or a combination thereof, wherein the second surface is a dielectric or a metal and contacting the substrate with a precursor comprising a hydrophobic compound to selectively deposit a passivation layer on the first surface relative to the second surface.

The present application discloses a method for fabricating a semiconductor device. The method includes forming a first dielectric layer on a substrate; forming an expanded hole in the first dielectric layer; conformally forming an adhesive layer in the expanded hole by a first chemical vapor deposition process; conformally forming a first conductive layer on the adhesive layer by a second chemical vapor deposition process; and forming a first conductive structure on the first conductive layer by a third chemical vapor deposition process. The adhesive layer, the first conductive layer, and the first conductive structure together configure a composite contact structure. The second chemical vapor deposition process includes an initial deposition step and subsequent deposition cycles repeated until the first conductive layer is formed to a predetermined thickness.

The present application discloses a method for fabricating a semiconductor device. The method includes forming a first dielectric layer on a substrate; forming an expanded hole in the first dielectric layer; conformally forming an adhesive layer in the expanded hole by a first chemical vapor deposition process; conformally forming a first conductive layer on the adhesive layer by a second chemical vapor deposition process; and forming a first conductive structure on the first conductive layer by a third chemical vapor deposition process. The adhesive layer, the first conductive layer, and the first conductive structure together configure a composite contact structure. The second chemical vapor deposition process includes an initial deposition step and subsequent deposition cycles repeated until the first conductive layer is formed to a predetermined thickness.

A method of depositing at least one fluoride layer comprises: depositing the fluoride layer on a substrate by photoassisted atomic layer deposition, ALD, in a plurality of ALD cycles. The method comprises irradiating the fluoride layer with UV/VIS light at least in some of the plurality of ALD cycles, such as in all ALD cycles, to anneal at least one potential crystal defect in the fluoride layer. The methods can be performed using an apparatus for atomic layer deposition of at least one fluoride layer, thereby producing an optical element comprising a substrate coated with such a fluoride layer, which can be used in an optical arrangement comprising at least one such optical element.

A method of depositing at least one fluoride layer comprises: depositing the fluoride layer on a substrate by photoassisted atomic layer deposition, ALD, in a plurality of ALD cycles. The method comprises irradiating the fluoride layer with UV/VIS light at least in some of the plurality of ALD cycles, such as in all ALD cycles, to anneal at least one potential crystal defect in the fluoride layer. The methods can be performed using an apparatus for atomic layer deposition of at least one fluoride layer, thereby producing an optical element comprising a substrate coated with such a fluoride layer, which can be used in an optical arrangement comprising at least one such optical element.

A film forming method includes: preparing a substrate having a protrusion and a recess recessed from a top surface of the protrusion in a surface of the substrate; forming a first film containing boron more thickly on the top surface of the protrusion than on an inside of the recess; and after the forming of the first film, alternately or simultaneously supplying a raw material gas containing halogen and an element X other than the halogen and a reaction gas reacting with an adsorbate of the raw material gas to the surface of the substrate, thereby forming a second film containing the element X more thickly inside the recess than on the top surface of the protrusion.

A film forming method includes: preparing a substrate having a protrusion and a recess recessed from a top surface of the protrusion in a surface of the substrate; forming a first film containing boron more thickly on the top surface of the protrusion than on an inside of the recess; and after the forming of the first film, alternately or simultaneously supplying a raw material gas containing halogen and an element X other than the halogen and a reaction gas reacting with an adsorbate of the raw material gas to the surface of the substrate, thereby forming a second film containing the element X more thickly inside the recess than on the top surface of the protrusion.

A film forming method includes the steps of loading a plurality of substrates into a processing chamber, heating an inside of the processing chamber by a chamber heater provided around the processing chamber, and heating a source gas in a first gas nozzle by a gas heater included in the first gas nozzle, and supplying the heated source gas from the first gas nozzle into the processing chamber. The supplying the source gas includes changing a position where the source gas is activated.

A film forming method includes the steps of loading a plurality of substrates into a processing chamber, heating an inside of the processing chamber by a chamber heater provided around the processing chamber, and heating a source gas in a first gas nozzle by a gas heater included in the first gas nozzle, and supplying the heated source gas from the first gas nozzle into the processing chamber. The supplying the source gas includes changing a position where the source gas is activated.

The present invention pertains to a process for direct deposition of graphene oxide onto a substrate of interest from a gaseous source of at least one carbon precursor, using a plasma-enhanced chemical vapor deposition method. It is also directed to a device for implementing this process.