Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a temperature of about 300 C. or more within a chamber, the substrate having a dielectric material and a single crystal formed thereon. The method further includes flowing a first process gas and a second process gas into the chamber, wherein: the first process gas comprises at least one boron-containing gas comprising a haloborane; and the second process gas comprises at least one Group IV element-containing gas. The method further includes exposing the substrate to the first and second process gases to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the single crystal.

A method of depositing film, the method includes preparing a substrate on which a plurality of recesses each having an opening with a different width are formed, depositing a silicon-containing film along surfaces of the plurality of recesses, filling the plurality of recesses on which the silicon-containing film is deposited with a carbon-containing film, exposing the silicon-containing film deposited on upper portions of the plurality of recesses from the carbon-containing film by anisotropically etching the carbon-containing film in a thickness direction of the substrate, and removing the silicon-containing film exposed from the carbon-containing film by etching the silicon-containing film using the carbon-containing film as an etching mask.

A method of depositing film, the method includes preparing a substrate on which a plurality of recesses each having an opening with a different width are formed, depositing a silicon-containing film along surfaces of the plurality of recesses, filling the plurality of recesses on which the silicon-containing film is deposited with a carbon-containing film, exposing the silicon-containing film deposited on upper portions of the plurality of recesses from the carbon-containing film by anisotropically etching the carbon-containing film in a thickness direction of the substrate, and removing the silicon-containing film exposed from the carbon-containing film by etching the silicon-containing film using the carbon-containing film as an etching mask.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

An oxygen-nitrogen co-doped hollow carbon nanoparticle and a preparation method therefor and an application for electrosynthesis of hydrogen peroxide. Carbon nanoparticles are taken as a base material, firstly, in an oxygen-containing atmosphere, high-energy oxygen plasma generated by radio frequency (RF) excitation bombard the surface of the carbon nanoparticles, forcing carbon-carbon bonds in the carbon material to break and exerting a strong ablation effect on graphite layers of carbon, thereby forming a special hollow carbon structure. After an oxygen doping reaction is finished, the oxygen-containing atmosphere is switched to a nitrogen-containing atmosphere to prepare an oxygen-nitrogen co-doped hollow carbon nanoparticle catalyst.

An oxygen-nitrogen co-doped hollow carbon nanoparticle and a preparation method therefor and an application for electrosynthesis of hydrogen peroxide. Carbon nanoparticles are taken as a base material, firstly, in an oxygen-containing atmosphere, high-energy oxygen plasma generated by radio frequency (RF) excitation bombard the surface of the carbon nanoparticles, forcing carbon-carbon bonds in the carbon material to break and exerting a strong ablation effect on graphite layers of carbon, thereby forming a special hollow carbon structure. After an oxygen doping reaction is finished, the oxygen-containing atmosphere is switched to a nitrogen-containing atmosphere to prepare an oxygen-nitrogen co-doped hollow carbon nanoparticle catalyst.