Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

An apparatus and process are presented for continuous production of metal-based micro-porous structures of pore sizes from 0.3 nm to 5.0 μm from a green part of characteristic diffusion mass transfer dimension less than 1 mm through chemical reactions in a continuous flow of gas substantially free of oxygen. The produced micro-porous structures include i) thin porous metal sheets of thickness less than 200 μm and pore sizes in the range of 0.1 to 5.0 μm, ii) porous ceramic coating of thickness less than 40 μm and ceramic particle sizes of 200 nm or less on a porous metal-based support structures of pore sizes in the range of 0.1 to 5 μm.

An apparatus and process are presented for continuous production of metal-based micro-porous structures of pore sizes from 0.3 nm to 5.0 μm from a green part of characteristic diffusion mass transfer dimension less than 1 mm through chemical reactions in a continuous flow of gas substantially free of oxygen. The produced micro-porous structures include i) thin porous metal sheets of thickness less than 200 μm and pore sizes in the range of 0.1 to 5.0 μm, ii) porous ceramic coating of thickness less than 40 μm and ceramic particle sizes of 200 nm or less on a porous metal-based support structures of pore sizes in the range of 0.1 to 5 μm.

A 3D printed diamond/metal matrix composite material and a preparation method and application thereof are provided. The composite material includes core-shell doped diamond, a metal matrix, and an additive, where the core-shell doped diamond includes a core, a transition layer, a shell, a coating, a porous layer, and a modification layer. The preparation method includes: uniformly mixing the diamond, the metal matrix, and the additive and performing 3D printing according to a 3D CAD slice model to obtain the composite material designed by the model. The metal matrix and the diamond surface of the composite material are mainly metallurgically bound, which can improve the binding strength between the diamond and the metal matrix, thereby improving the use properties of the composite material and a diamond tool. The core-shell doped diamond has good ablation resistance, and can effectively avoid and reduce thermal damage to diamond in a 3D printing forming process.

Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.

Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.

There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.

Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.