There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.

There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.

Generally, examples described herein relate to methods and processing systems for forming isolation structures (e.g., shallow trench isolations (STIs)) between fins on a substrate. In an example, fins are formed on a substrate. A liner layer is conformally formed on and between the fins. Forming the liner layer includes conformally depositing a pre-liner layer on and between the fins, and densifying, using a plasma treatment, the pre-liner layer to form the liner layer. A dielectric material is formed on the liner layer.

Generally, examples described herein relate to methods and processing systems for forming isolation structures (e.g., shallow trench isolations (STIs)) between fins on a substrate. In an example, fins are formed on a substrate. A liner layer is conformally formed on and between the fins. Forming the liner layer includes conformally depositing a pre-liner layer on and between the fins, and densifying, using a plasma treatment, the pre-liner layer to form the liner layer. A dielectric material is formed on the liner layer.

An article comprises a body having a coating. The coating comprises a YOF coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

An article comprises a body having a coating. The coating comprises a YOF coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

An article comprises a body having a coating. The coating comprises a Y-O-F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

An article comprises a body having a coating. The coating comprises a Y-O-F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.