C23C16/28

Process and Apparatus for Continuous Production of Porous Structures
20190358706 · 2019-11-28 ·

An apparatus and process are presented for continuous production of metal-based micro-porous structures of pore sizes from 0.3 nm to 5.0 m from a green part of characteristic diffusion mass transfer dimension less than 1 mm through chemical reactions in a continuous flow of gas substantially free of oxygen. The produced micro-porous structures include i) thin porous metal sheets of thickness less than 200 m and pore sizes in the range of 0.1 to 5.0 m, ii) porous ceramic coating of thickness less than 40 m and ceramic particle sizes of 200 nm or less on a porous metal-based support structures of pore sizes in the range of 0.1 to 5 m.

Method of filling recess and processing apparatus
10475645 · 2019-11-12 · ·

A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H.sub.2 gas or NH.sub.3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.

Method of filling recess and processing apparatus
10475645 · 2019-11-12 · ·

A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H.sub.2 gas or NH.sub.3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.

Selective deposition of metals, metal oxides, and dielectrics

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Selective deposition of metals, metal oxides, and dielectrics

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Low temperature molybdenum film deposition utilizing boron nucleation layers

The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl.sub.5 or MoOCl.sub.4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

Low temperature molybdenum film deposition utilizing boron nucleation layers

The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl.sub.5 or MoOCl.sub.4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

Flourination process to create sacrificial oxy-flouride layer

An article comprises a body having a coating. The coating comprises a YOF coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Flourination process to create sacrificial oxy-flouride layer

An article comprises a body having a coating. The coating comprises a YOF coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS
20190295583 · 2019-09-26 ·

A magnetic recording medium includes a nonmagnetic substrate, a soft magnetic underlayer, an orientation control layer, a perpendicular magnetic layer, and a protection layer that are arranged in this order. The perpendicular magnetic layer includes a first magnetic layer and a second magnetic layer that are arranged in this order on the orientation control layer. The first magnetic layer has a granular structure including an oxide at grain boundary parts of magnetic grains, and the second magnetic layer is closest to the protection layer among layers within the perpendicular magnetic layer, and includes magnetic grains made of a CoCrPt alloy, and a nitride of carbon or a hydride of carbon.