A CVD apparatus for manufacturing a III-nitride-based layer having a rotating wafer carrier positioned inside a reaction chamber that receives a mixture of a nitrogen gas source and a group III element gas source. Recesses are formed within the wafer carrier, each including a satellite disc of thickness x for accepting a wafer of thickness t. The satellite disc includes a peripheral notch of height a, and a notch thickness of x−a=b. A peripheral retaining ring includes a vertical rise portion extending a distance of e+f and a laterally-extending portion, the laterally-extending portion engaging the satellite disc notch. A gap c is formed between the substrate and a surface of the satellite disc. The relationship of a+b+c+t=b+e+f is satisfied such that laminar flow occurs in the region of the retaining ring.

A film forming method includes: preparing a substrate having a recess within a processing container; forming a silicon-containing film on the substrate by activating a silicon-containing gas with plasma and supplying the activated silicon-containing gas to the substrate; partially modifying the silicon-containing film after the silicon-containing film closes an opening of the recess; and selectively etching the modified silicon-containing film.

Provided are: an oriented electrical steel sheet having a high tension applied to a steel sheet and excellent adhesion to a film; and a method for producing the same. This oriented electrical steel sheet includes: a steel sheet; a film A containing a crystalline material disposed on the steel sheet; and a film B containing a vitreous material disposed on the film A, wherein an element profile, which is obtained by using a high-frequency glow discharge light-emission surface analysis method, in the direction from the film B to the steel sheet satisfies formulae (1) and (2). 0.35≤(t.sub.A/t.sub.Fe/2)≤0.75 . . . (1), 0.25≤(t.sub.A/2/t.sub.Fe/2)≤1.00 . . . (2), where t.sub.A represents the peak time of an alkali metal element profile, t.sub.A/2 represents the half time of an alkali metal.

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(R.sup.2.sub.2N).sub.n(Si—Si)X.sub.xH.sub.h (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R.sup.1a, R.sup.1b, R.sup.1c, R.sup.2.sub.2, and X are as described herein.

Described are lanthanide-containing metal coordination complexes which may be used as precursors in thin film depositions, e.g. atomic layer deposition processes. More specifically, described are homoleptic lanthanide-aminoalkoxide metal coordination complexes, lanthanide-carbohydrazide metal coordination complexes, and lanthanide-diazadiene metal coordination complexes. Additionally, methods for depositing lanthanide-containing films through an atomic layer deposition process are described.

Methods and systems for selectively depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, comprising a first area comprising a first material and a second area comprising a second material, selectively depositing a first doped semiconductor layer overlying the first material relative to the second material and selectively depositing a second doped semiconductor layer overlying the first doped semiconductor layer relative to the second material.

A window assembly heat transfer system is disclosed in which a window member has a selected transparency to monitored or sensed electromagnetic wavelengths. One or more passages are provided in the window member for flowing a single-phase or two-phase heat transfer fluid. A mechanism allows either evaporation or condensation of the fluid and/or balancing of a flow of the fluid within the passages. In one embodiment, the window assembly can be made by producing passages in a top surface of a first single plate, optionally producing passages in a bottom surface of a second single plate and bonding the top surface of the first plate to a bottom surface of a second single plate to form the window member with the passage or passages. In another embodiment, the window assembly can be made by providing a core around which the window member material is grown and thereafter removing the core to produce the passage or passages.

A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.

A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.

Embodiments described herein relate to layered structures having a top surface which is hydrophobic for reducing the wetting of water or ice on the layered structure without requiring reapplication. In one or more embodiments, a layered structure is provided and includes a coating containing silicon, oxygen, and carbon disposed over a substrate and an interface disposed between the substrate and the coating. The substrate is at least partially transparent to visible light, a concentration of carbon in the coating is greater at a top surface of the coating than the interface, and the top surface of the coating is disposed on the opposite side of the coating than the interface.