Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.

A transfer chamber for a processing system suitable for processing a plurality of substrates and a method of using the same is provided. The transfer chamber includes a lid, a bottom disposed opposite the lid, a plurality of sidewalls sealingly coupling the lid to the bottom and defining an internal volume, wherein the plurality of sidewalls form the faces of a dodecagon. An opening is formed in each of the faces, wherein the opening is configured for a substrate to pass therethrough. A transfer robot is disposed in the internal volume, wherein the transfer robot has effectors configured to support the substrate through one opening to another opening.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

Disclosed are compositions, methods and processes for fabricating and using a device or other implement including a surface or surfaces having a nanoscale or microscale layer or coating of Si—O—N—P. These coatings and/or layers may be continuous, on the surface or discontinuous (e.g., patterned, grooved), and may be provided on silica surfaces, metal (e.g., titanium), ceramic, and combination/hybrid materials. Methods of producing an implantable device, such as a load-bearing or non-load-bearing device, such as a bone or other structural implant device (load-bearing), are also presented. Craniofacial, osteogenic and disordered bone regeneration (osteoporosis) uses and applications of devices that include at least one surface that is treated to include a nanoscale or microscale layer or coating of Si—O—N—P are also provided. Methods of using the treated and/or coated devices to enhance enhanced vascularization and healing at a treated surface of a device in vivo, is also presented.

Protected aerospace components are provided and contain a nanolaminate film stack disposed on a surface of an aerospace component, where the nanolaminate film stack comprises alternating layers of a chromium-containing layer and a second deposited layer. The chromium-containing layer can include metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.

Protected aerospace components are provided and contain a nanolaminate film stack disposed on a surface of an aerospace component, where the nanolaminate film stack comprises alternating layers of a chromium-containing layer and a second deposited layer. The chromium-containing layer can include metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.

A method of forming a patterned polymer layer on a substrate and a substrate having a polymer layer formed by the method. The method includes providing a substrate comprising a first surface having a first surface energy and a pattern located on the substrate forming a second surface having a second, lower surface energy than the first surface, and selectively depositing a polymeric layer onto the first surface using a monomer material in an initiated chemical vapor deposition process, wherein the initiated chemical vapor deposition process is operated under supersaturation conditions during the deposition process.

A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate.

A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate.

A method is for depositing a thin tungsten and/or molybdenum sulfide film on a substrate chemically, under vacuum.