The present invention relates to a compound of the formula (Ia) or the formula (Ib)

##STR00001##

a process for their preparation; and the use of the compound for the preparation of the Si- and Ge-containing solid.

An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula:

[Chemical Formula]

M.sub.xAl.sub.1−xN.sub.y,

wherein x and y satisfy the following relations: 0<x<1 and y≥1.

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

A method for manufacturing a semiconductor structure is provided. The method includes a III-V semiconductor device in a first region of a base substrate and a further device in a second region of the base substrate. The method includes: (a) obtaining a base substrate comprising the first region and the second region, different from the first region; (b) providing a buffer layer over a surface of the base substrate at least in the first region, wherein the buffer layer comprises at least one monolayer of a first two-dimensional layered crystal material; (c) forming, over the buffer layer in the first region, and not in the second region, a III-V semiconductor material; and (d) forming, in the second region, at least part of the further device. A semiconductor structure is also provided.

A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 Gpa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.

Embodiments of the present disclosure generally relate to a substrate support having a two-part surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an upper surface and a two-part coating disposed over the upper surface of the body. The two-part coating includes a first coating layer extending a first radial distance from a center of the body. The first coating layer includes at least one of a metal-containing material or alloy. The two-part coating includes a second coating layer disposed over the first coating layer. The second coating layer extends a second radial distance from the center of the body. The first radial distance is greater than the second radial distance. The second coating layer is non-metal.

An ultra-fast charging, high-capacity composite material for use with anodes in lithium-ion batteries including a phosphorene layer on a carbon-based negative electrode material. The carbon-based negative electrode material may be activated carbon, graphene, carbon nanotubes, or combinations thereof. The phosphorene layer includes a base layer of black phosphorus upon which is deposited activated carbon having a disclosed range of particle size and surface area. In a second embodiment, the negative electrode material is a composite of activated carbon and black carbon and includes a negative electrode current collector of copper foil. A slurry is made from a carbon-based conductive agent and a binder, and applied to both sides of the copper foil, then heated and compacted with a rolling machine. The anodes thus produced are used in making lithium-ion batteries, capacitors, etc.

An ultra-fast charging, high-capacity composite material for use with anodes in lithium-ion batteries including a phosphorene layer on a carbon-based negative electrode material. The carbon-based negative electrode material may be activated carbon, graphene, carbon nanotubes, or combinations thereof. The phosphorene layer includes a base layer of black phosphorus upon which is deposited activated carbon having a disclosed range of particle size and surface area. In a second embodiment, the negative electrode material is a composite of activated carbon and black carbon and includes a negative electrode current collector of copper foil. A slurry is made from a carbon-based conductive agent and a binder, and applied to both sides of the copper foil, then heated and compacted with a rolling machine. The anodes thus produced are used in making lithium-ion batteries, capacitors, etc.

A film forming method includes: (a) preparing a substrate having an oxide layer formed on the substrate; (b) supplying a nitrogen-containing gas to the substrate heated by a heater; and (c) forming a molybdenum film on the oxide layer by alternately supplying a raw material gas containing molybdenum and a reducing gas a plurality of times.

A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.