The manufacturing apparatus for a group-III compound semiconductor crystal according to the present disclosure comprises a reaction container. The reaction container has a raw material reaction section, a crystal growth section, and a gas flow channel. The raw material reaction section has a raw material reaction chamber, and a raw material gas nozzle. The crystal growth section has a substrate supporting member, and reactive gas nozzles. The gas flow channel includes a first flow channel, a second flow channel, and a connection portion. The first flow channel has a first opening, and the second flow channel has a second opening. The area of the second opening is configured to be larger than the area of the first opening. The connection portion connects the first opening and the second opening with each other. The gas flow channel forms a gas flow path in the reaction container. The substrate supporting member is disposed inside the gas flow path and located on the downstream side of the first opening.

A process for manufacturing a friction component made of composite material, includes the densification of a fibrous preform of carbon yarns by a matrix including at least pyrocarbon and at least one ZrO.sub.xC.sub.y phase, where 1≤x≤2 and 0≤y≤1, the matrix being formed by chemical vapor infiltration at least from a first gaseous precursor of pyrocarbon and a second gaseous precursor including zirconium, the second precursor being an alcohol or a C.sub.1 to C.sub.6 polyalcohol modified by linking the oxygen atom of at least one alcohol function to a group of formula —Zr—R.sub.3, the substituents R being identical or different, and R being selected from: —H, C.sub.1 to C.sub.5 carbon chains and halogen atoms.

A semiconductor device and method for manufacturing the semiconductor device are disclosed. Specifically, the semiconductor device may include a charge trapping layer with improved retention and speed for VNAND applications. The charge trapping layer may comprise an aluminum nitride (AlN) or aluminum oxynitride (AlON) layer.

A method of depositing a coating and a layered structure is provided. A coating is deposited on a substrate to make a layered structure, such that an interface between the coating and the substrate is formed. The coating includes silicon, oxygen, and carbon, where the carbon doping in the coating increases between the interface and the top surface of the coating. The top surface of the coating is inherently hydrophobic and icephobic, and reduces the wetting of water or ice film on the layered structure, without requiring reapplication of the coating.

A method of depositing a coating and a layered structure is provided. A coating is deposited on a substrate to make a layered structure, such that an interface between the coating and the substrate is formed. The coating includes silicon, oxygen, and carbon, where the carbon doping in the coating increases between the interface and the top surface of the coating. The top surface of the coating is inherently hydrophobic and icephobic, and reduces the wetting of water or ice film on the layered structure, without requiring reapplication of the coating.

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

The invention relates to a method of forming a coating for deposition to non-metallic surfaces, comprising the steps of applying (120) a semiconductor material to a substrate to form a semiconductor material layer and simultaneously or subsequently applying (140) metallic material or additional semiconductor material, wherein the metallic material or additional semiconductor material is introduced into the semiconductor material layer in a targeted manner to tailor the optical properties of the coating.

The invention relates to a method of forming a coating for deposition to non-metallic surfaces, comprising the steps of applying (120) a semiconductor material to a substrate to form a semiconductor material layer and simultaneously or subsequently applying (140) metallic material or additional semiconductor material, wherein the metallic material or additional semiconductor material is introduced into the semiconductor material layer in a targeted manner to tailor the optical properties of the coating.

Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.