Methods for manufacturing a multilayer composite display cover include stacking a plurality of composite layers, each comprising an ultra-thin glass sheet covered in a polymer layer. After a cover glass sheet is placed on an exposed polymer layer, the composite layers may be bonded together. A ceramic coating may be applied to the external surfaces to increase hardness.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semiconductor manufacturing processes, particular for depositing dielectric films and the use of such films in various electronic devices.

A component includes a metallic substrate having a tribological surface and a coating. The coating includes a first layer disposed on the tribological surface and a second layer disposed on the first layer. The first layer includes titanium, chromium, or a diamond-like carbon (DLC). The second layer includes a disulfide.

Packaging materials and methods of manufacture are disclosed. The packaging material comprises a substrate surface and film coating selected from the group consisting of an elastomer, a polymer, an inorganic material and combinations thereof. The film coating includes a first layer and a second layer, the first layer deposited on the second layer. The first layer has a formula of SiO.sub.xN.sub.yC.sub.z, where x is in a range from 1.9 to 2.15, y is in a range from 0.01 to 0.08, and z is in a range from 0.10 to 0.40.

A method for producing metal-based micro-porous structures includes continuously feeding a solid green part and a gas flow into a tunnel reactor having an aspect ratio greater than 2, wherein the solid green part has a characteristic diffusion mass transfer dimension less than 1 mm and a gas in the gas flow is substantially free of oxidants, and chemically reacting the gas in the gas flow and the green part under a predetermined temperature profile along a length of the tunnel reactor for a sufficient time to convert the green part into a solid product having pore sizes in a range of 0.3 nm to 5 μm.

A method for producing metal-based micro-porous structures includes continuously feeding a solid green part and a gas flow into a tunnel reactor having an aspect ratio greater than 2, wherein the solid green part has a characteristic diffusion mass transfer dimension less than 1 mm and a gas in the gas flow is substantially free of oxidants, and chemically reacting the gas in the gas flow and the green part under a predetermined temperature profile along a length of the tunnel reactor for a sufficient time to convert the green part into a solid product having pore sizes in a range of 0.3 nm to 5 μm.

The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.