A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.

Systems and methods for highly reproducible and focused plasma jet printing and patterning of materials using appropriate ink containing aerosol through nozzles with narrow orifice and tubes with controlled dielectric constant connected to high voltage power supply, in the presence of electric field and plasma, that enables morphological and/or bulk chemical modification and/or surface chemical modification of the material in the aerosol and/or the substrate prior to printing, during printing and post printing.

A chemical vapor infiltration (CVI) method for densifying at least one porous component includes placing the at least one porous component inside a crucible, bringing temperature inside the crucible to a value adapted to densify the porous component to transform it into a densified component, bringing pressure inside the crucible between 0.1 KPa and 25 KPa, once operational temperature and pressure are reached, flowing gas inside the crucible, gas being suitable for densifying the porous component to transform it into a densified component, and keeping an oxidizing environment outside the crucible, the external environment lapping against the crucible. The crucible is provided of at least one material having thermal conductivity greater than 30 W/mK from room temperature to at least 1000° C. selected from: sintered silicon carbide (SiC), silicon-infiltrated silicon carbide (Si—SiC), sintered boron carbide (B4C), silicon-infiltrated boron carbide (Si—B4C), sintered zirconium carbide (ZrC), silicon-infiltrated zirconium carbide (Si—ZrC), a combination of silicon carbide (SiC), boron carbide (B4C) and sintered and/or silicon-infiltrated zirconium carbide (ZrC).

Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.

In a method for depositing semiconductor layers, a first process step is performed to deposit a layer containing gallium and a second process step is performed to deposit a layer containing indium. To prevent gallium from being incorporated from residues in the process chamber into the layer containing indium when the layer containing indium is deposited, a reactive gas containing indium is additionally supplied to the process chamber during the first process step and the first process parameters are adjusted such that the first layer contains no indium, or in an intermediate step between the first and second process steps, a reactive gas containing indium is supplied to the process chamber and the process parameters are adjusted such that no indium is deposited on the substrate during the intermediate step. In the second process step, the second process parameters are adjusted such that the second layer contains no gallium.

The present invention discloses a coating device including: a first shell, having a top portion and a side portion; and a second shell, accommodated in the first shell and at least partially divergently extending downwards from the top portion of the first shell. The first shell and the second shell define a first space in between, the second shell defines a second space, and the first space surrounds the second space and the two are not in communication.

A method includes receiving one or more parameters associated with a plurality of metal plates. The method further includes determining, based on the one or more parameters, a plurality of predicted deformation values associated with the plurality of metal plates. Each of the plurality of predicted deformation values correspond to a corresponding metal plate of the plurality of metal plates. The method further includes causing, based on the plurality of predicted deformation values, the plurality of metal plates to be diffusion bonded to produce a bonded metal plate structure.

A semiconductor manufacturing apparatus includes a reaction chamber configured to perform a process on a semiconductor substrate using a gas mixture comprising a first gas, and a first path configured to exhaust resultant gas that comprises the first gas from the reaction chamber. The semiconductor manufacturing apparatus further includes a first trap provided in the first path and configured to extract at least a portion of the first gas from the resultant gas, and a second path in which the trap is not provided and configured to exhaust the resultant gas from the reaction chamber.

Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier is cleaned at a predetermined frequency.

Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier and susceptor are cleaned at a predetermined frequency. After that, the carrier is carried out from the reaction chamber, and the reaction gas is supplied to the reaction chamber to form a polysilicon film on the surface of the susceptor.