Exemplary semiconductor processing systems may include a remote plasma source and a processing chamber. The processing chamber may include a gasbox defining an access into the processing chamber. The systems may include an adapter positioned between the remote plasma source and the processing chamber. The adapter may include a mounting block defining a central aperture. The remote plasma source may be seated on a first surface of the mounting block. The adapter may include a mounting plate characterized by a first surface on which the mounting block is seated. The mounting plate may define a central aperture axially aligned with the central aperture defined through the mounting block. The mounting plate may define a recess in the first surface of the mounting plate extending about the central aperture through the mounting plate. The recess may form a volume between the mounting block and the mounting plate.

A film deposition method according to an embodiment includes rotating a wafer mounted on a susceptor in a reaction chamber. Next, a temperature of the wafer is controlled such that, when changing a rotational speed of the wafer before and after a film deposition step of introducing a process gas into the reaction chamber and epitaxially growing a SiC film on the wafer, a force of friction generated on a contact surface between the wafer and the susceptor becomes larger than a force of inertia generated in a direction of rotation of the wafer.

A method includes receiving, by a processing device, first data from an optical sensor of a processing chamber. The method further includes processing the first data to obtain second data. The second data includes an indication of a condition of a coating on an interior surface of the processing chamber. The method further includes generating an indication of performance of a processing operation of the processing chamber in view of the second data. The method further includes causing performance of a corrective action in view of the indication of performance of the processing chamber.

A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

Gas injector inserts having a wedge-shaped housing, at least one first slot and at least one second slot are described. The housing has a first opening in the back face that is in fluid communication with the first slot in the front face and a second opening in the back face that is in fluid communication with the second slot in the front face. Each of the first slot and the second slot has an elongate axis that extends from the inner peripheral end to the outer peripheral end of the housing. The gas injector insert is configured to provide a flow of gas through the first slots at supersonic velocity. Gas distribution assemblies and processing chambers including the gas injector inserts are described.

The object of the present invention is to provide a cleaning apparatus for a component of a semiconductor production apparatus, which is capable of preventing the attachment of reaction products into the cleaning processing furnace by a simple structure, the present invention provides a cleaning apparatus (1) for a component of a semiconductor production apparatus including: a cleaning processing furnace (2) which is configured to house the component (10) of a semiconductor production apparatus; a heating device (3); a gas introduction pipe (4); a gas discharge pipe (5); a decompression device (6); a first temperature control device (7); a second temperature control device (8); and a purge gas supply device (9).

A chemical vapor deposition (CVD) system may include a chamber, a susceptor provided in the chamber to support a substrate, a gas distribution part provided over the susceptor, a first ground strap bar provided on a bottom inner surface of the chamber and electrically connected to the chamber, a second ground strap bar provided on a bottom surface of the susceptor and electrically connected to the susceptor, and a plurality of ground straps electrically connected to the first and second ground strap bars, each of the plurality of ground straps including two opposite portions that are fastened to the first and second ground strap bars, respectively.

A method of controlling contamination of a vapor deposition apparatus includes: a wafer loading step of loading a wafer for contamination evaluation into a chamber of the vapor deposition apparatus; a heat treatment step of heat treating the wafer for contamination evaluation at a heat treatment temperature of 1190° C. or more at a hydrogen flow rate of 30 slm or less; a wafer unloading step of unloading the wafer for contamination evaluation from the inside of the chamber; and a wafer contamination evaluation step of evaluating a level of metal contamination of the wafer for contamination evaluation. In a method of producing an epitaxial wafer, epitaxial growth is performed using a vapor deposition apparatus whose contamination is controlled by the contamination controlling method.

In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate, a central opening in fluid communication with the central gas channel, and a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.

In some examples, a rib cover is provided for a multi-station processing module having a rib disposed between adjacent processing chambers. An example rib cover comprises a first portion for supporting the rib cover on the rib, a first side shield to cover a first wall of the rib when the rib cover is fitted thereto, and at least one spacer to hold an inner surface of the rib cover away from the covered rib.