Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate.

The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

Exemplary semiconductor processing systems include a processing chamber defining a processing region. The semiconductor processing systems may include a foreline coupled with the processing chamber. The foreline may define a fluid conduit. The semiconductor processing systems may include a foreline trap coupled with a distal end of the foreline. The semiconductor processing systems may include a removable insert provided within an interior of the foreline trap. The semiconductor processing systems may include a throttle valve coupled with the foreline trap downstream of the removable insert.

Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

Embodiments of the disclosure generally relate to a method and apparatus for filling gaps and trenches on a substrate and tools for batch annealing substrates. In one embodiment, a batch processing chamber comprising a lower shell, a substrate transfer port formed through the lower shell, an upper shell disposed on the lower shell, an inner shell disposed within the upper shell, a heater operational to heat the inner shell, a lift plate moveably disposed within the lower shell, a cassette disposed on the lift plate and configured to hold a plurality of substrates within the inner chamber, and an injection port, is disclosed. The inner shell and upper shell bound an outer chamber while the inner shell and the lower shell bound an inner chamber that is partially enveloped by the outer chamber. The injection port is configured to introduce a fluid into the inner chamber.

The present disclosure relates to an apparatus for trapping multiple reaction by-products for a semiconductor process, in which in order to separate, with the single trapping apparatus, reaction by-product mixtures contained in unreacted gases discharged after a process of depositing multiple different thin film layers is performed in a process chamber during a semiconductor manufacturing process, a trapping region division part is provided, which divides a heat distribution region into trapping regions for respective reaction by-products while controlling a flow in a movement direction of an introduced unreacted gas, thereby trapping a reaction by-product aggregated in the form of a thin film in a relatively high-temperature region by using a first internal trapping tower in a front region, and trapping a reaction by-product aggregated in the form of powder in a relatively low-temperature region by using a second internal trapping tower in a rear region.

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70? C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

The invention relates to a coating chamber (1) for performing a vacuum-assisted coating process, in particular PVD or CVD or electric arc coating chamber or hybrid coating chamber.

The coating chamber (1) comprises a heat shield (3, 31, 32, 33), which is arranged on a temperature-controllable chamber wall (2) of the coating chamber (1) and is intended for adjusting an exchange of a predeterminable amount of thermal radiation between the heat shield (3, 31, 32, 33) and the temperature-controllable chamber wall (2). According to the invention the heat shield (3, 31, 32, 33) comprises at least one exchangeable radiating shield (31), which is directly adjacent to an inner side (21) of the chamber wall (2), wherein a first radiation surface (311) of the radiating shield (31),that is directed towards the chamber wall (2) has a first predeterminable heat exchange coefficient (.sub.D1) and a second radiation surface (312) of the radiating shield (31) that is directed away from the chamber wall (2) has a second predeterminable heat exchange coefficient (.sub.D2), wherein the first heat exchange coefficient (.sub.D1) higher than the second heat exchange coefficient (.sub.D2). The invention further relates to a heat shield for a coating chamber as well as a coating method.