The processing of the surface of a substrate to grow a high-quality thin film layer with Atomic Layer Deposition (ALD) includes first preparing the substrate surface and then creating an improved interface layer on the surface of the substrate prior the ALD growth. These processes are achieved within a single processing equipment.

The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.

A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

Disclosed herein are a processing chamber and a method for processing a SiC substrate. The processing chamber includes a gas showerhead; a susceptor disposed below the gas showerhead, the gas showerhead configured to flow a process gas toward the susceptor; a protective region disposed below the susceptor; and a heating assembly having a front side facing directly a backside of the susceptor. The heat assembly further includes a plurality of lamps. Both the backside of the susceptor and the front side of the heating assembly are exposed to the protective region. The lamps are also exposed to the protective region. The processing chamber includes a chamber body formed by a lid shielded by a lid liner, an upper side section shielded by a side liner, a lower side section, and a bottom section. The lid includes cooling channels. The upper side section also includes cooling channels.

An atomic layer deposition apparatus including an atomic layer deposition reactor and a reactor door. The reactor door is arranged against the end edge of the reactor in a closed position of the reactor. The apparatus having a cooling arrangement for cooling the reactor door having a shell structure surrounding the reactor from the outside of the reactor such that a cooling channel is formed between the shell structure and the at least one side wall of the reactor; a heat exchanger element arranged in the cooling channel in an area of the end edge; and a ventilation discharge connection in connection with the cooling channel provided at a distance from the edge end.