A film forming apparatus includes: a film forming gas discharge part; an exhaust port; a rotation mechanism; a heating part configured to heat the interior of a reaction container to a temperature lower than a temperature of a film forming gas discharged from the film forming gas discharge part; first gas discharge holes opened, in the film forming gas discharge part, toward a gas temperature reducing member so that the film forming gas is cooled by colliding with the gas temperature reducing member inside the reaction container before the film forming gas is supplied to substrates; and second gas discharge holes opened, in the film forming gas discharge part, in a direction differing from an opening direction of the first gas discharge holes so that the film forming gas does not collide with the gas temperature reducing member before the film forming gas is supplied to the substrates.

A heater or cooler vacuum chamber for degassing includes an enclosure and within the enclosure a controllably heatable or coolable pocket. Within the pocket is a workpiece holder and a gas feedline discharging the pocket. The inner surface of the pocket surrounds the workpiece in a closely spaced manner. The two halves forming the pocket may be controllably separate so as to allow a gas flow connection which establishes a negligible gas flow restriction to the remainder of the enclosure.

Embodiments described herein provide a substrate processing apparatus that includes a vacuum chamber comprising a first dome and a second dome, a substrate support disposed inside the vacuum chamber between the first and second domes, a collimated energy source arranged in a compartmented housing and positioned proximate the second dome, wherein the second dome is between the collimated energy source and the substrate support. At least a portion of the second dome and the substrate support may be optically transparent to the collimated energy from the collimated energy source.

A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.

A deposition method relating to semiconductor technology is presented. The deposition method includes: conducting a first deposition in a reaction chamber at a first deposition temperature; conducting a cool-down process on the reaction chamber, and conducting a second deposition during the cool-down process. In the first deposition, the thin-films deposited on the periphery of a wafer are thicker than those deposited on the center of a wafer, while in the second deposition, the thin-films deposited on the periphery of a wafer are thinner that those deposited on the center of a wafer. Therefore the thin-films deposited by this deposition method are more homogeneous in thickness that those deposited with conventional methods.

A temperature controller of a plasma-processing apparatus including a heating unit and a cooling unit. The heating unit is configured to heat a liner on an inner surface of a plasma chamber in which a plasma is formed. The cooling unit is configured to cool the liner to controls a temperature of an upper electrode in the plasma chamber.

An MOCVD system for growing a semiconductor layer on a substrate is provided. The MOCVD system includes an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface; a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber; an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer; a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500 C.

A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

An apparatus and method for cooling a gas distribution assembly with a cooling plate. The cooling plate having a body having a top surface, an outer perimeter, a center, an inner zone and an outer zone. A plurality of channels formed through the top surface. The plurality of channels having a first outer channel having one or more first outer channel segments configured for flowing a first cooling fluid from a cooling fluid inlet to a cooling fluid outlet and a first inner channel disposed between the first outer channel and the center having one or more first inner channel segments configured for flowing a second cooling fluid from a cooling fluid inlet to a cooling fluid outlet wherein flow in adjacent segments is in an opposite direction.

An apparatus for controlling the temperature in a processing chamber for semiconductor processing is disclosed herein. In one embodiment, a baffle assembly is configured to direct air flow from a center of a lid of the processing chamber to an outer edge of the lid. The baffle assembly has a baffle center having a side surface and a bottom surface, wherein the bottom surface is ring shaped with a central opening. The baffle assembly has a middle baffle extending outward from the side surface of the baffle center. The baffle assembly has a conical baffle extending inward from the side surface of the baffle center, and a top baffle extending upward from the side surface of the baffle center.