A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

In the present chiller apparatus, a refrigerant flow path is branchably attached to a lower electrode serving as a large sample table, which copes with a case where the surface area of a sample is large in a configuration in which a plasma treatment device connected to a refrigerant cycle equipped with a heating device is applied. A control device transmits a heating adjustment control signal generated based on a result of a PID arithmetic operation including proportion, integration, and differentiation on a lower electrode refrigerant pipe refrigerant detection temperature detected from a temperature sensor provided in the vicinity of a refrigerant flow path of a heat insulating portion relative to the lower electrode of a lower electrode refrigerant pipe connected to be linked to the refrigerant cycle to a heating device and performs feedback control such that the lower electrode refrigerant pipe refrigerant detection temperature becomes a setting temperature.

The invention relates to a vacuum chamber for the treatment of substances, comprising at least the following elements: heat supply elements for the heat supply into a treatment area of the vacuum chamber, in which at least one substrate (10) can be treated, a chamber wall (20), through which heat can be removed from the treatment area, comprising an inner and an outer chamber wall side, and a shielding wall (30), which is arranged between the chamber wall (20) and the treatment area, such that an averted shielding wall side regarding to the treatment area is placed opposite the inner chamber wall side,
and characterized in, that the shielding wall side placed opposite the inner chamber wall side is at least partially, preferred largely applied with a first coating (31), which has an emission coefficient 0.65.

The present disclosure relates to an apparatus for collecting reaction by-products for semiconductor processes through pyrolysis in a high-temperature region and an oxidation reaction in a low-temperature region, and an object of the present disclosure is to provide an apparatus for collecting reaction by-products, which is capable of collecting powdered oxides grown from High K materials by inducing an oxidation reaction in a box-shaped collection part having a low-temperature region formed by a cooling pad part after thermally decomposing the High K material at a high temperature of a heater in an inlet port of the collection apparatus when High K deposition precursors, which are supplied to a process chamber for an oxidation process for depositing a semiconductor dielectric film with the High K material having high permittivity in order to miniaturize a semiconductor circuit, are discharged together with exhaust gas.

Exemplary substrate processing chambers may include a chamber body defining a processing region. The chambers may include a backing plate disposed atop the chamber body, a diffuser above the processing region and supported by the backing plate, and a cooling frame disposed between the backing plate and the diffuser. The cooling frame may be coupled with the diffuser. The cooling frame may include a body having one or more fluid inlets and one or more fluid outlets. The body may define an opening. The fluid inlets may be in fluid communication with the one or more fluid outlets via one or more fluid lumens that each extend at least partially about a periphery of the opening. The fluid inlets may be in fluid communication with one or more fluid supply lumens. The fluid outlets may be in fluid communication with one or more fluid return lumens.

Vapor deposition precursor recovery systems and methods are provided. Methods and systems include a precursor container housing a precursor material and a carrier gas container housing a carrier gas. Systems and methods include a condenser assembly having a condenser in fluid connection with an exhaust line, a recycled precursor container, and a cooling circuit. Systems and methods include a vaporizer having one or more inlets in fluid connection with the precursor container and the carrier gas container, and an outlet in fluid connection with a gas distributor and the condenser assembly. Systems and methods include where the condenser is maintained at an internal temperature of greater than or about 10 C. below a boiling point of the precursor material and greater than or about 10 C. above a boiling point of the carrier gas.

Even when two processing furnaces are included, space can be saved by removing needed equipment. Included are: first and second furnaces that process a substrate; a heat exchanger that cools a refrigerant discharged from the first and second furnaces; an exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends out the refrigerant to a downstream side; first and second flow paths that connect the first and second furnaces, the heat exchanger, and the exhaust blower to each other such that the refrigerant can flow therethrough; first and second dampers having variable opening degrees disposed upstream from the heat exchanger in the first and second flow paths, respectively; and a controller that controls heating and cooling of the first and second furnaces. The first and second flow paths merge together in at least a part of each of the first and second flow paths.