Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

In one or more embodiments, a semiconductor processing kit includes a reflector assembly. The reflector assembly configured to support one or more sensing devices therein. The reflector assembly includes a body having a top surface and a volume at least partially defined by an inner surface and an outer surface. The reflector assembly further includes a baffle and a fluid channel disposed within the baffle. The fluid channel is configured to flow a fluid to adjust a temperature of the one or more sensing devices. A ring is disposed on the top surface. The ring is configured to reduce a flow of a fluid into the volume. A reflector is concentrically disposed radially outward of the outer surface and creates a gap that allows the fluid to partially flow between the inner surface of the reflector and the outer surface.

The innovative reactor comprises: a first reaction chamber, a second reaction chamber, an induction heating system for the reaction chambers, and a liquid flow cooling system for the reaction chambers. According to some designs, the cooling system comprises a reservoir that is designed to contain coolant and that is divided into a first reservoir section and a second reservoir section in fluidic communication with each other. The two reaction chambers are typically located in two side-by-side but separate spaces.

The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a second upper region of the tube (110) to facilitate circulation of the flowing liquid in the interspace (112).

According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate retainer provided with a heat insulating region at a lower portion thereof; a first reaction tube with open upper and lower ends; a second reaction tube with a closed upper end and an open lower end; a furnace opening flange provided with a holder in a first space between the first reaction tube and the second reaction tube; a heater covering the second reaction tube to heat a substrate arranged in the substrate retainer in the first reaction tube; a first highly reflective structure provided in the heat insulating region; and a second highly reflective structure arranged at the holder provided at the furnace opening flange and along an inner wall of the second reaction tube at a lower portion of the second reaction tube in the first space.

The present invention relates to a casing assembly of a reactor for the epitaxial deposition of semiconductor films on a substrate. The casing assembly comprises an inner and an outer casing made of quartz and connected by at least two flanges made of engineering plastics. The invention also relates to a reaction chamber enclosed by said casing assembly, and a reactor employing at least one of said reaction chambers.

The present invention relates to a casing assembly of a reactor for the epitaxial deposition of semiconductor films on a substrate. The casing assembly comprises an inner and an outer casing made of opaque and transparent quartz and connected by at least two flanges. The invention also relates to a reaction chamber enclosed by said casing assembly, and a reactor employing at least one of said reaction chambers.

The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

A cooling device that cools a cooling target using a gas, includes: a housing configured to accommodate the cooling target and having a sidewall surrounding the cooling target; a plurality of supply holes arranged at an interval in the sidewall of the housing and serving as a flow path to introduce the gas from an external space of the housing to an interior of the housing; and a discharge path opened to the housing and configured to discharge the gas in the interior of the housing, wherein, to form a swirling flow rotating along the sidewall in the interior of the housing, each of the plurality of supply holes is formed toward a direction in which the gas is released along the swirling flow, when the housing is viewed in a plan view.

There is provided a substrate processing apparatus including a process chamber for processing a substrate, a transfer chamber accommodating a transfer that has a housing configured by a hollow structure and is capable of transporting the substrate; a sensor for obtaining information about at least one of sound or vibration generated during an operation of the transfer; a receiver for receiving the information obtained by the sensor; and an analyzer for analyzing occurrence of abnormality or malfunction of the transfer by comparing the information with a preset threshold value.