A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.

There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.

A flange, flange assembly, and reactor system including the flange and flange assembly are disclosed. An exemplary flange assembly includes heated and cooled sections to independently control temperatures of sections of the flange. Methods of using the flange, flange assembly and reactor system are also disclosed.

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 m/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300 C. and 1800 C.

A substrate retaining apparatus, a load lock assembly comprising the substrate retaining apparatus, and a system including the substrate retaining apparatus are disclosed. The substrate retaining apparatus can include at least one sidewall and one or more heat shields. One or more of the at least one sidewall can include a cooling fluid conduit to facilitate cooling of substrates retained by the substrate retaining apparatus. Additionally or alternatively, one or more of the at least one sidewall can include a gas conduit to provide gas to a surface of a retained substrate.

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 ?m/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300? C. and 1800? C.

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 ?m/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300? C. and 1800? C.

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 ?m/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300? C. and 1800? C.

A substrate retaining apparatus, a load lock assembly comprising the substrate retaining apparatus, and a system including the substrate retaining apparatus are disclosed. The substrate retaining apparatus can include at least one sidewall and one or more heat shields. One or more of the at least one sidewall can include a cooling fluid conduit to facilitate cooling of substrates retained by the substrate retaining apparatus. Additionally or alternatively, one or more of the at least one sidewall can include a gas conduit to provide gas to a surface of a retained substrate.

An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.