An apparatus for performing a film forming process on a substrate, includes a rotary table, a separation region including a separation gas supply configured to supply a separation gas and a main ceiling surface configured to form a separation gas gap for the separation gas, a central region including a central ceiling surface arranged around the rotation center, a rotary shaft exhaust passage made of a tubular body and connected to the rotary table to rotate the rotary table about the rotation center, the rotary shaft exhaust passage having an exhaust path formed therein, a ceiling surface side exhaust passage formed to vertically penetrate a member constituting the central region, a first exhaust port configured to exhaust the first processing gas to one of the two exhaust passages, and a second exhaust port configured to exhaust the second processing gas to the other one of the two exhaust passages.

A gas distribution assembly and method for reducing the eccentricity between a shower plate and an exhaust duct are disclosed. The gas distribution assembly includes positioning devices configured to reduce misalignment between the shower plate and the exhaust duct. The gas distribution assembly and method can be used to improve uniformity of film deposition thickness.

A film forming apparatus includes: substrate processing chambers, which is formed by partitioning a space in a processing container in a circumferential direction when viewed from top, and in each of which a substrate is received and a receiving port for processing gases is formed to face a central portion of the processing container; a gas supply including a rotating body provided in the central portion of the processing container, and having a first gas supply hole and a second gas supply hole which are formed at different positions on a side peripheral surface of the rotating body along a circumferential direction; and a rotary mechanism configured to rotate the rotating body around a vertical axis such that a first processing gas and a second processing gas are switched and repeatedly supplied to the substrate processing chambers via the receiving ports, respectively.

An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.

Apparatus and methods for reducing undesirable residue material deposition and buildup on one or more surfaces within a processing chamber are provided herein. In embodiments disclosed herein, a processing chamber includes a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a processing volume; a showerhead disposed in the chamber lid and having a bottom surface adjacent the processing volume; and an isolator disposed between the chamber lid and the one or more sidewalls. The isolator includes a first end contacting the showerhead; a second end opposite the first end; an angled inner wall connected to the first end and extending radially outwardly from the first end towards the second end; and a lower inner wall at a different angle from the angled inner wall. The first end and the angled inner wall of the isolator form a first angle less than 90°.

Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

Embodiments described herein provide a gas supply system for reducing purge time and increasing processing throughput, and an atomic layer deposition (ALD) chamber having the same. The gas supply system includes an inert gas line and a precursor supply line. The inert gas line is configured to be coupled to an inlet of the chamber separate from the precursor supply line. Therefore, the inert gas is supplied concurrently to the precursor supply line and the processing region of the chamber such that total purge time is reduced. The reduction of the total purge time due to the gas supply system increases purge efficiency and increases processing throughput. Furthermore, the gas supply system allows inert gas to be utilized as a dilution gas during flow of precursors.

A method for densifying one or more porous substrates with pyrolytic carbon by chemical vapour infiltration, includes admitting, at the inlet of the densification furnace, a reactive gaseous phase including at least one pyrolytic carbon precursor; reacting at least a fraction of the reactive gaseous phase with the porous substrate or substrates; extracting, at the outlet of the densification furnace, gaseous effluents originating from the reactive gaseous phase; reintroducing, with the reactive gaseous phase admitted at the inlet of the densification furnace, at least a fraction of the gaseous effluents extracted at the outlet of the furnace, wherein the fraction of the gaseous effluents introduced with the reactive gaseous phase includes at least one polyaromatic hydrocarbon compound.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber body having a top body and a bottom body which combine to provide a treating space therein; a substrate support unit configured to support a substrate at the treating space; a fluid supply unit configured to supply a treating fluid to the treating space; a fluid exhaust line for exhausting the treating fluid from the treating space; and a guide member provided to surround a periphery of the substrate supported by the substrate support unit.

An exhaust pipe apparatus according to an embodiment includes a dielectric pipe; a radio-frequency electrode; and a plasma generation circuit. The exhaust pipe apparatus functions as a part of an exhaust pipe disposed between a process chamber and a vacuum pump that exhausts gas inside the process chamber. The radio-frequency electrode includes a thin metal plate disposed on an outer periphery side of the dielectric pipe, a buffer member disposed on an outer periphery side of the thin metal plate, and a conductive hollow structure disposed on an outer periphery side of the buffer member and a radio-frequency voltage is applied to the radio-frequency electrode. The plasma generation circuit generates plasma inside the dielectric pipe.