A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the baffle housing, the baffle assembly comprising a set of baffle plates, the baffle plates spaced along a support rod from a first baffle plate to a last baffle plate, the baffle plates alternately disposed above and below the support rod and alternately disposed in an upper region and a lower region of the baffle housing.

An apparatus and method for arranging a precursor vapor flow through a vertical atomic layer deposition (ALD) cartridge along a top-to-bottom vertical channel in a central area of the cartridge, and for moving particulate material to be ALD processed in the cartridge upwards, upon rotation, by a threaded area substantially extending from the vertical channel to a side wall of the cartridge, and downwards along the vertical channel to cause the particulate material to cycle during ALD processing.

The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

Embodiments of the disclosed subject matter provide a device including a carrier plate, and a die including a mating surface with a patterned thin film of metal or metal oxide surface bonded to the carrier plate using a solder preform with voids that overlay the patterned thin film on the die, where the oxide surface is disposed opposite a moat in a mating surface of the carrier plate, and where the voided regions remain free of solder when the solder is reflowed.

A vacuum pumping arrangement includes a first primary pump having an inlet and an outlet, and a first common pumping line fluidly connected to the inlet, the first common pumping line including a plurality of first common pumping line inlets each of which is fluidly connectable to at least one vacuum process chamber forming the semiconductor fabrication tool, the first primary pump and the first common pumping line handling deposition process flows. The pumping arrangement further including a second primary pump having an inlet and an outlet, and a second common pumping line fluidly connected to the inlet of the second primary pump, the second common pumping line including a plurality of second pumping line inlets each of which is fluidly connectable to at least one process chamber forming the semiconductor fabrication tool, the second primary pump and the second common pumping line handling cleaning process flows.

A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.

Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Devices for deposition of material via organic vapor jet printing (OVJP) and similar techniques are provided. The depositor includes delivery channels ending in delivery apertures, where the delivery channels are flared as they approach the delivery apertures, and/or have a trapezoidal shape. The depositors are suitable for fabricating OLEDs and OLED components and similar devices.

A method is provided. The method includes introducing a process gas into an interior space of a processing chamber through a gas inlet port, wherein a substrate is supported within the interior space. The process gas is evacuated from the interior space by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber. A flow of the process gas is controlled by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port.

A method for densifying one or more porous substrates with pyrolytic carbon by chemical vapour infiltration, includes admitting, at the inlet of the densification furnace, a reactive gaseous phase including at least one pyrolytic carbon precursor; reacting at least a fraction of the reactive gaseous phase with the porous substrate or substrates; extracting, at the outlet of the densification furnace, gaseous effluents originating from the reactive gaseous phase; reintroducing, with the reactive gaseous phase admitted at the inlet of the densification furnace, at least a fraction of the gaseous effluents extracted at the outlet of the furnace, wherein the fraction of the gaseous effluents introduced with the reactive gaseous phase includes at least one polyaromatic hydrocarbon compound.