A substrate processing method includes: exhausting a first space in a processing container by an exhaust mechanism, which is configured to exhaust the first space via a gap by exhausting a second space in the processing container, or configured to exhaust the first space in a state in which a seal gas is caused to flow from the second space to the first space via the gap; and executing the substrate processing on a substrate while causing, by a driving mechanism configured to move a stage, a position of the stage to be changed such that a width of the gap becomes uniform in a time average.

A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.

The present disclosure is directed an apparatus for regulating gas flow in a deposition chamber during a deposition process. The apparatus includes an interior wall that forms an accommodating portion that accommodates a wafer support structure and an exterior wall disposed opposite the interior wall. The apparatus further includes an upper surface, coupled to both the interior wall and the exterior wall, that has a plurality of openings therethrough. The plurality of openings are configured to distribute a flow of gas originating above the apparatus when the apparatus is positioned over a gas outlet port of the deposition chamber.

According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

To reduce a hydroxy group in a silicon oxide film formed at a low temperature and obtain a silicon oxide film with an excellent film quality, (a) accommodating a substrate on a surface of which a silicon oxide film formed at a processing temperature of 300° C. or lower is formed in a processing container, (b) plasma-exciting a hydrogen gas, and a step of supplying hydrogen active species generated in (b) to the substrate are performed.

A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

An atomic layer deposition device is disclosed. The atomic layer deposition device includes a chamber, a precursor inlet, a heater, a support unit, a hollow component, and a baffle. When the heater and the support unit are driven by a lifting device to approach the hollow component, the support unit and the baffle surround and set bounds to a reaction space, so that the flow field of the process fluid, such as precursor or purge gas, can be adjusted stably to make a uniform deposition on the substrate.

A gas mixing device includes: a cylindrical portion including an upper surface which is closed; a gas outflow passage formed in a central portion of a bottom surface of the cylindrical portion, and extends downward; a plurality of gas stream guide walls disposed to be spaced apart from each other in a circumferential direction along an edge of an opening formed by the gas outflow passage in the bottom surface, and installed to be rotationally symmetrical to a center of the cylindrical portion, the gas stream guide walls protruding toward the upper surface; and a gas inlet part installed between the gas stream guide walls and an inner peripheral surface of the cylindrical portion, and into which a gas to be mixed flows.

A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.