A method for forming films on particles of powder includes diffusing the powder by leading the powder into a jet nozzle and ejecting a jet flow of the powder; leading the diffused particles of powder, a raw material gas, and a reaction gas activated by atmospheric pressure plasma, into a reaction container, and forming a swirl flow in the container; and forming the films on the diffused particles of powder by reaction of a raw material gas and an activated reaction gas in the container. An apparatus is also disclosed having a reaction container with a peripheral wall having a round section in plan view and a jet nozzle for a powder source, raw material gas, and atmospheric pressure plasma sources are coupled to and enter the container at an angle with a radius thereof thereby forming a swirl flow to form a film on the powder.

Disclosed is a powder atomic layer deposition equipment with a quick release function, comprising a vacuum chamber, a shaft sealing device, and a driving unit connected to the shaft sealing device. The vacuum chamber is connected to the shaft sealing device, and an enclosed space is formed between the vacuum chamber and the shaft sealing device. At least one air extraction line is located in the shaft sealing device and fluidly connected to the enclosed space, the air extraction line being used in pumping gas out from the enclosed space to fix the vacuum chamber to the shaft sealing device so that the drive unit rotates the vacuum chamber via the shaft sealing device to facilitate the formation of a uniform thin film on powder surface. When the pumping stops, the vacuum chamber can be quickly released from the shaft sealing device to improve the process efficiency and convenience of use.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

A product includes a solid state electrolyte particle coated with a coating consisting essentially of metal oxide. A method includes depositing a coating on a solid state electrolyte particle by atomic layer deposition. A method includes fabricating a product using a plurality of solid state electrolyte particles coated with a coating consisting essentially of metal oxide.

The use of Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) applied to powders and intermediates of the MLCC fabrication process can provide significant advantages. Coating metal particles within a defined range of ALD cycles is shown to provide enhanced oxidation resistance. Surprisingly, a very thin ALD layer was found to substantially increase sintering temperature.

Provided are a composite negative electrode material, a preparation method therefor and a lithium battery. The composite negative electrode material comprises silicon-containing particles and a carbon coating layer coating at least part of the surface of silicon-containing particles. In Raman spectrum, the composite negative electrode material has a silicon characteristic peak A between 450 cm.sup.−1-550 cm.sup.−1, a carbon characteristic peak B between 1300 cm.sup.−1-1400 cm.sup.−1, a carbon characteristic peak C between 1530 cm.sup.−1-1630 cm.sup.−1, and a graphene structure characteristic peak D between 2500 cm.sup.−1-2750 cm.sup.−1. The preparation method comprises: in protective atmosphere, introducing reaction gas to react with silicon-containing particles, the reaction temperature being 700° C.-1450° C., and the reaction gas comprising a carbon-containing gas, so that at least part of the surface of silicon-containing particles form a carbon coating layer, so as to obtain the composite negative electrode material.

Provided are powder atomic layer deposition (ALD) equipment capable of increasing deposition uniformity of powder by using a gas supply sequence with or without an impeller or a vibration generator, and a gas supply method thereof, the powder ALD equipment including a process chamber having an accommodation space therein to accommodate powder, a gas supplier for sequentially supplying a plurality of gases to the powder, and a gas exhauster for exhausting, to outside, the gases discharged from the process chamber, wherein the gas supplier includes a gas supply plate, a first gas supply line, a first valve, edge valves, and a gas supply sequence controller.

Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon coated particles having very low levels of contaminants such as metals and oxygen. These silicon coated particles are produced, conveyed, and formed into crystals in an environment maintained at a low oxygen level or a very low oxygen level and a low contaminant level or very low contaminant level to minimize the formation of silicon oxides and minimize the deposition of contaminants on the coated particles. Such high purity coated silicon particles may not require classification and may be used in whole or in part in the crystal production method. The crystal production method and the resultant high quality of the silicon boules produced are improved by the reduction or elimination of the silicon oxide layer and contaminants on the coated particles.

A method for forming nanostructures including introducing a hollow shell into a reactor. The hollow shell has catalyst nanoparticles exposed on its interior surface. The method also includes introducing a precursor into the reactor to grow nanostructures from the interior surface of the hollow shell from the catalyst nanoparticles.

The invention provides a process for depositing a coating onto particles being pneumatically transported in a tube. The process comprising the steps of providing a tube having an inlet opening and an outlet opening; feeding a carrier gas entraining particles into the tube at or near the inlet opening of the tube to create a particle flow through the tube; and injecting a first self-terminating reactant into the tube via at least one injection point downstream from the inlet opening of the tube for reaction with the particles in the particle flow. The process is suitable for atomic layer deposition and molecular layer deposition. An apparatus for carrying out the process is also disclosed.