A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.

According to embodiments of the present invention, a composite material is provided, comprising an interconnected network comprising a material that is thermally conductive and electrically insulative, and a polymer. Preferably, the composite material comprises hexagonal boron nitride network and polyimide. The hexagonal boron nitride network is preferably formed on a template by chemical vapour deposition. The interconnected network is preferably about 0.3 vol % or less of the composite material. According to further embodiments of the present invention, a method of forming a composite material, and an electrical component are also provided. Said composite material may be useful as flexible electrical elements.

A method and apparatus for preparing boron nitride nanotubes (BNNTs) according to an embodiment may ensure mass-production, may increase yield by reducing a production time, and may prepare BNNTs with high purity. The method includes steps of providing a first powder including boron, forming a second powder including a boron precursor by nano-sizing the first powder, forming a precursor disk by mixing the second powder with a binder; and growing BNNTs on the precursor disk.

A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.

3D bundle-shaped multi-walled carbon nanotubes and preparation method, includes the following steps: uniformly mixing bi-component alloy catalyst and transition metal in an inert gas environment in order to obtain a three-component nano-intermetallic alloy catalyst; disposing the intermetallic catalyst on the substrate; allowing hydrogen to flow through the substrate, and heating the substrate to a first temperature, and using the hydrogen to undergo a reduction of the intermetallic catalyst at the first temperature; applying a protective gas and a carbon source gas, heating the substrate to a second temperature, undergoing a reaction at the second temperature to generate the 3D bundle-shaped multi-walled carbon nanotubes, and collecting the 3D bundle-shaped multi-walled carbon nanotubes after annealing; wherein the second temperature is greater than or equal to the first temperature; a working electrode includes conductive drain material, a conductive bonding gent and a plurality of 3D bundle-shaped multi-walled carbon nanotubes.

A non-woven fabric is provided which includes a three-dimensional array of fibers. The three-dimensional array of fibers includes an array of standing fibers extending perpendicular to a plane of the non-woven fabric and attached to a base substrate, where the base substrate is one or more of an expendable film substrate, a metal base substrate, or a mandrel substrate. Further, the three-dimensional array of fibers includes multiple layers of non-woven parallel fibers running parallel to the plane of the non-woven fiber in between the array of standing fibers in a defined pattern of fiber layer orientations. In implementation, the array of standing fibers are grown to extend from the base substrate using laser-assisted chemical vapor deposition (LCVD).

Provided is a polysilicon manufacturing apparatus including a reactor disposed on a base plate to form a reaction chamber, a pair of electrical feedthroughs installed on the base plate to be extended to the inside of the reaction chamber, rod filaments installed on the electrical feedthroughs in the reaction chamber and connected to each other by a rod bridge at the upper end to form a silicon rod by chemical vapor deposition of source gas introduced to a gas inlet, and a cooling jacket inserted to a through-hole provided at the upper side of the reactor to be supported to the base plate, connected to a gas outlet formed on the base plate by forming a gas passage discharging the gas after reaction, and introducing and circulating a low-temperature coolant to a coolant passage from the outside of the reactor by forming the coolant passage at the outside of the gas passage to discharge a high-temperature coolant to the outside of the reactor.

Embodiments of a reflective surface and a reflector comprising a reflective surface for use in a thermal decomposition reactor are disclosed. Methods for using the reflective surface, or reflector comprising the reflective surface, to manage a temperature profile in a silicon rod grown in the thermal decomposition reactor are also disclosed. The reflective surface is configured to receive radiant heat energy emitted from an energy emitting region of an elongated polysilicon body grown during chemical vapor deposition onto a silicon filament and reflect at least a portion of the received radiant heat energy to a reflected energy receiving region of the elongated polysilicon body or to a reflected energy receiving region of a second elongated polysilicon body, to thereby add radiant heat energy to the reflected energy receiving region.

A method of forming graphene nanostripes includes providing a substrate comprising at least one of copper foil or nickel foam and subjecting the substrate to a reduced pressure environment in a processing chamber. The method also includes providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas, flowing the methane gas and the 1,2-DCB into the processing chamber, and establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber. The partial pressure ratio is between 0 and 3. The method further includes generating a plasma, thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma, and growing the graphene nanostripes coupled to the at least a portion of the substrate.

Provided are a method for preparing a vertical branched graphene comprising treating a pristine vertical graphene with an inert plasma in the absence of an introduced carbon source to develop a vertical branched graphene. The method may also include pre-treating a substrate surface with an inert plasma; depositing a pristine vertical graphene onto the substrate surface by contacting the substrate surface with a deposition plasma comprising a carbon source gas for a deposition period. Also provided are a vertical branched graphene attached to a substrate surface, the vertical branched graphene having a trunk portion extending from the substrate surface, said trunk possessing an increased degree of branching as the distance from the substrate surface increases; and a freestanding branched graphene with a proximal end and a distal end, the proximal end comprising a trunk portion, the trunk portion possessing and increased degree of branching as the distance from the proximal end increases and the distance to the distal end decreases.