Silicon-containing materials along with process for producing and uses for the same. The process includes reacting the silicon-containing materials in a fluidized bed reactor by deposition of silicon from at least one silicon precursor in pores and on the surface of porous particles. A fluidizing gas stream is provided within the fluidized bed reactor that is fully or partly induced to oscillate in a pulsed manner and propagates in the form of a wave and acts on the fluidized bed so as to form a homogeneously fluidized bed as a pulsed gas stream so as to form a homogeneously fluidized bed having a fluidization index FI of at least 0.95. Where the fluidizing gas stream has a superficial velocity which is above a measured minimum fluidization velocity of the pulsed gas stream and where the pulsation is combined with mechanical stirring as a further fluidizing aid.

The present disclosure relates to a process for coating an oxide material comprising: (a) providing a particulate material chosen from lithiated nickel-cobalt aluminum oxides, lithiated cobalt-manganese oxides, and lithiated layered nickel-cobalt-manganese oxides, (b) treating the cathode active material with a metal alkoxide, metal amide, alkyl metal compound, metal halide, or metal hydride at a pressure ranging from 5 mbar to 1 bar above ambient pressure, (c) deactivating the material obtained in step (b) with a HF containing gas at ambient pressure, wherein step (b) is carried out in a mechanical mixer chosen from compulsory mixers and free-fall mixers, or step (b) is carried out using a moving bed or a fixed bed.

The present disclosure relates to a process for coating an oxide material, process comprising: (a) providing a particulate material chosen from lithiated nickel-cobalt aluminum oxides, lithiated cobalt-manganese oxides, and lithiated layered nickel-cobalt-manganese oxides, (b) treating the cathode active material with a metal alkoxide, a metal halide, a metal chloride, a metal amide, or an alkyl metal compound, (c) treating the material obtained in step (b) with a gas containing HF, and, optionally, repeating the sequence of steps (b) and (c), wherein step (b) is carried out in a mechanical mixer, or step (b) is carried out using a moving bed or fixed bed wherein steps (b) and (c) are carried out at a pressure that is in the range of from 5 mbar to 1 bar above ambient pressure.

The present disclosure relates to a process for coating an oxide material, process comprising: (a) providing a particulate material chosen from lithiated nickel-cobalt aluminum oxides, lithiated cobalt-manganese oxides, and lithiated layered nickel-cobalt-manganese oxides, (b) treating the cathode active material with a metal alkoxide, a metal halide, a metal chloride, a metal amide, or an alkyl metal compound, (c) treating the material obtained in step (b) with a gas containing HF, and, optionally, repeating the sequence of steps (b) and (c), wherein step (b) is carried out in a mechanical mixer, or step (b) is carried out using a moving bed or fixed bed wherein steps (b) and (c) are carried out at a pressure that is in the range of from 5 mbar to 1 bar above ambient pressure.

A multi-inlet gas distributor for a fluidized bed chemical vapor deposition reactor that may include a distributor body having an inlet surface, an exit surface opposed to the inlet surface, and a side perimeter surface. The distributor body may also include multiple-inlets evenly spaced from each other, wherein the multiple-inlets penetrate the distributor body from the inlet surface to a first depth. The distributor body may additionally include cone-shaped apertures connecting to corresponding ones of the multiple-inlets at the first depth and extend from the first depth toward the exit surface. An apex may be formed on the exit surface at the intersection of the cone-shaped apertures.

A multi-inlet gas distributor for a fluidized bed chemical vapor deposition reactor that may include a distributor body having an inlet surface, an exit surface opposed to the inlet surface, and a side perimeter surface. The distributor body may also include multiple-inlets evenly spaced from each other, wherein the multiple-inlets penetrate the distributor body from the inlet surface to a first depth. The distributor body may additionally include cone-shaped apertures connecting to corresponding ones of the multiple-inlets at the first depth and extend from the first depth toward the exit surface. An apex may be formed on the exit surface at the intersection of the cone-shaped apertures.

The present invention provides various passive electronic components comprising a layer of coated particles, and methods for producing and using the same. Some of the passive electronic components of the invention include, but are not limited to conductors, resistors, current collectors, capacitors, piezoelectronic devices, inductors and transformers. The present invention also provides energy storage devices and electrode layers for such energy storage devices having passive, electrically-conductive particles coated with one or more thin film materials.

The present invention provides various passive electronic components comprising a layer of coated particles, and methods for producing and using the same. Some of the passive electronic components of the invention include, but are not limited to conductors, resistors, current collectors, capacitors, piezoelectronic devices, inductors and transformers. The present invention also provides energy storage devices and electrode layers for such energy storage devices having passive, electrically-conductive particles coated with one or more thin film materials.

Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi.sub.2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSi.sub.x with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 m.sup.2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.

The fluidized bed process for preparing polysilicon by chemical vapor deposition is improved by positioning at least one Laval nozzle upstream from a gas inlet into the reactor.